Role of oxygene vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Y. Nunoshige, T. Nabatame, H.Ohta H.Ohta, A.Toriumi A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
Journalthe 5th International Symposium on Control of Semiconductor Interfaces (Tokyo,Japan)
Publication statusPublished - 2007 Nov 12

Cite this

Role of oxygene vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates. / Nunoshige, Y.; Nabatame, T.; H.Ohta, H.Ohta; A.Toriumi, A.Toriumi; T.Ohishi, T.Ohishi; Oishi, Tomoji.

In: the 5th International Symposium on Control of Semiconductor Interfaces (Tokyo,Japan), 12.11.2007.

Research output: Contribution to journalArticle

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AU - T.Ohishi, T.Ohishi

AU - Oishi, Tomoji

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