Role of oxygene vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Y. Nunoshige, T. Nabatame, H.Ohta H.Ohta, A.Toriumi A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
Journalthe 5th International Symposium on Control of Semiconductor Interfaces (Tokyo,Japan)
Publication statusPublished - 2007 Nov 12

Cite this