Role of oxygene vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Y. Nunoshige, T. Nabatame, H.Ohta H.Ohta, A.Toriumi A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	the 5th International Symposium on Control of Semiconductor Interfaces (Tokyo,Japan)
Publication status	Published - 2007 Nov 12

Cite this

@article{40cb8c7a90f04adca50151476fe0fd2c,

title = "Role of oxygene vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates",

author = "Y. Nunoshige and T. Nabatame and H.Ohta H.Ohta and A.Toriumi A.Toriumi and T.Ohishi T.Ohishi and Tomoji Oishi",

year = "2007",

month = nov,

day = "12",

language = "English",

journal = "the 5th International Symposium on Control of Semiconductor Interfaces (Tokyo,Japan)",

}

TY - JOUR

T1 - Role of oxygene vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

AU - Nunoshige, Y.

AU - Nabatame, T.

AU - H.Ohta, H.Ohta

AU - A.Toriumi, A.Toriumi

AU - T.Ohishi, T.Ohishi

AU - Oishi, Tomoji

PY - 2007/11/12

Y1 - 2007/11/12

M3 - Article

JO - the 5th International Symposium on Control of Semiconductor Interfaces (Tokyo,Japan)

JF - the 5th International Symposium on Control of Semiconductor Interfaces (Tokyo,Japan)

ER -