Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition

K. Ishii, D. Isshiki, Y. Ohki, H. Nishikawa, M. Takiyama

Research output: Contribution to journalArticle

15 Citations (Scopus)
Original languageEnglish
Pages (from-to)205-211
JournalJapanese Journal of Applied Physics
Volume34
Publication statusPublished - 1995 Jan 1

Cite this

Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition. / Ishii, K.; Isshiki, D.; Ohki, Y.; Nishikawa, H.; Takiyama, M.

In: Japanese Journal of Applied Physics, Vol. 34, 01.01.1995, p. 205-211.

Research output: Contribution to journalArticle

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AU - Nishikawa, H.

AU - Takiyama, M.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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