Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

Keisuke Ishii, Daisuke Isshiki, Yoshimichi Ohki, Hiroyuki Nishikawa, Makoto Takiyama

Research output: Chapter in Book/Report/Conference proceedingChapter

15 Citations (Scopus)

Abstract

The intrinsic breakdown strength of thin SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane was measured using a self-healing technique by applying short-duration voltage pulses. Point defects in the films and other film qualities were examined by instrumental analyses and by optical absorption and luminescence using synchrotron radiation. The intrinsic breakdown strength decreases when the deposition temperature becomes higher than 400 °C, in spite of the fact that the optical gap and the density increase and the impurity content decreases. Based on the fact that the film deposited at high temperatures shows absorption at 7.6-eV and luminescence at 4.4-eV, the existence of oxygen vacancies (≡Si-Si≡) is suggested. The intrinsic breakdown strength is increased by decreasing oxygen vacancies through oxygen treatment. From these results, it is considered that oxygen vacancies play a crucial role in lowering the breakdown strength. Three possible mechanisms are discussed.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
Place of PublicationMinato-ku, Japan
PublisherJJAP
Pages205-211
Number of pages7
Volume34
Edition1
Publication statusPublished - 1995 Jan
Externally publishedYes

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Point defects
Oxygen vacancies
Plasma enhanced chemical vapor deposition
Electric breakdown
Luminescence
Polymers
Synchrotron radiation
Light absorption
Impurities
Thin films
Temperature
Oxygen
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ishii, K., Isshiki, D., Ohki, Y., Nishikawa, H., & Takiyama, M. (1995). Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (1 ed., Vol. 34, pp. 205-211). Minato-ku, Japan: JJAP.

Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. / Ishii, Keisuke; Isshiki, Daisuke; Ohki, Yoshimichi; Nishikawa, Hiroyuki; Takiyama, Makoto.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 1. ed. Minato-ku, Japan : JJAP, 1995. p. 205-211.

Research output: Chapter in Book/Report/Conference proceedingChapter

Ishii, K, Isshiki, D, Ohki, Y, Nishikawa, H & Takiyama, M 1995, Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. in Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 1 edn, vol. 34, JJAP, Minato-ku, Japan, pp. 205-211.
Ishii K, Isshiki D, Ohki Y, Nishikawa H, Takiyama M. Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 1 ed. Vol. 34. Minato-ku, Japan: JJAP. 1995. p. 205-211
Ishii, Keisuke ; Isshiki, Daisuke ; Ohki, Yoshimichi ; Nishikawa, Hiroyuki ; Takiyama, Makoto. / Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 1. ed. Minato-ku, Japan : JJAP, 1995. pp. 205-211
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