Room temperature terahertz emission via intracenter transition in semiconductors

Hikari Dezaki, Menglong Jing, Sundararajan Balasekaran, Tadao Tanabe, Yutaka Oyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

An efficient continuous wave (CW) THz source working at nominal room temperature is described. Optically pumped room temperature THz emission is observed from various kinds of semiconductor bulk crystals. In order to investigate the emission mechanism, temperature dependences of terahertz emission intensity in various semiconductors are measured. Semiconductor samples used are InSb, InSb: Ge, InAs, GaSb, Ge, and Si. From these results, it is shown that the temperature dependences of emission characteristics are different between direct and indirect transition semiconductors, and that the high resistive Ge is suitable for room temperature THz emitter via intracenter transitions excited by IR pump lasers.

Original languageEnglish
Title of host publicationAdvanced Materials in Microwaves and Optics, AMMO2011
PublisherTrans Tech Publications Ltd
Pages66-69
Number of pages4
ISBN (Print)9783037852736
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2011 International Conference on Advanced Materials in Microwaves and Optics, AMMO2011 - Bangkok, Thailand
Duration: 2011 Sep 302011 Oct 1

Publication series

NameKey Engineering Materials
Volume500
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Conference

Conference2011 International Conference on Advanced Materials in Microwaves and Optics, AMMO2011
CountryThailand
CityBangkok
Period11/9/3011/10/1

Keywords

  • Intracenter transition
  • Shallow level
  • Terahertz wave

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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