Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates

B. J. Zhang, T. Egawa, G. Y. Zhao, Hiroyasu Ishikawa, M. Umeno, T. Jimbo

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

GaN films were grown on sapphire and SiC substrates. The crystal qualities of GaN films were investigated by photoluminescence, atomic force microscopy, and electron-beam-induced current measurements, etc. It was found that the crystal quality of GaN on SiC is better than the one on sapphire. Ni/Au Schottky contacts were formed on the both samples. The electronic characteristics were obtained by current-voltage and capacitance-voltage measurements. Schottky diodes on sapphire substrate show breakdown voltage of -80 V. While for SiC substrate, the strong breakdown was not observed even at -100 V. The reverse leakage current of diodes based on SiC is over three orders of magnitude lower than that of sapphire substrate when the reverse voltage is above 50 V, which is due to the presence of low dislocation density and high thermal conductivity.

Original languageEnglish
Pages (from-to)2567-2569
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number16
DOIs
Publication statusPublished - 2001 Oct 15
Externally publishedYes

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Schottky diodes
sapphire
electric potential
electrical faults
electrical measurement
crystals
electric contacts
leakage
thermal conductivity
breakdown
capacitance
diodes
atomic force microscopy
electron beams
photoluminescence
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates. / Zhang, B. J.; Egawa, T.; Zhao, G. Y.; Ishikawa, Hiroyasu; Umeno, M.; Jimbo, T.

In: Applied Physics Letters, Vol. 79, No. 16, 15.10.2001, p. 2567-2569.

Research output: Contribution to journalArticle

Zhang, BJ, Egawa, T, Zhao, GY, Ishikawa, H, Umeno, M & Jimbo, T 2001, 'Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates', Applied Physics Letters, vol. 79, no. 16, pp. 2567-2569. https://doi.org/10.1063/1.1410355
Zhang, B. J. ; Egawa, T. ; Zhao, G. Y. ; Ishikawa, Hiroyasu ; Umeno, M. ; Jimbo, T. / Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates. In: Applied Physics Letters. 2001 ; Vol. 79, No. 16. pp. 2567-2569.
@article{00af124afe0346e3a93ab85f385d6a43,
title = "Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates",
abstract = "GaN films were grown on sapphire and SiC substrates. The crystal qualities of GaN films were investigated by photoluminescence, atomic force microscopy, and electron-beam-induced current measurements, etc. It was found that the crystal quality of GaN on SiC is better than the one on sapphire. Ni/Au Schottky contacts were formed on the both samples. The electronic characteristics were obtained by current-voltage and capacitance-voltage measurements. Schottky diodes on sapphire substrate show breakdown voltage of -80 V. While for SiC substrate, the strong breakdown was not observed even at -100 V. The reverse leakage current of diodes based on SiC is over three orders of magnitude lower than that of sapphire substrate when the reverse voltage is above 50 V, which is due to the presence of low dislocation density and high thermal conductivity.",
author = "Zhang, {B. J.} and T. Egawa and Zhao, {G. Y.} and Hiroyasu Ishikawa and M. Umeno and T. Jimbo",
year = "2001",
month = "10",
day = "15",
doi = "10.1063/1.1410355",
language = "English",
volume = "79",
pages = "2567--2569",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates

AU - Zhang, B. J.

AU - Egawa, T.

AU - Zhao, G. Y.

AU - Ishikawa, Hiroyasu

AU - Umeno, M.

AU - Jimbo, T.

PY - 2001/10/15

Y1 - 2001/10/15

N2 - GaN films were grown on sapphire and SiC substrates. The crystal qualities of GaN films were investigated by photoluminescence, atomic force microscopy, and electron-beam-induced current measurements, etc. It was found that the crystal quality of GaN on SiC is better than the one on sapphire. Ni/Au Schottky contacts were formed on the both samples. The electronic characteristics were obtained by current-voltage and capacitance-voltage measurements. Schottky diodes on sapphire substrate show breakdown voltage of -80 V. While for SiC substrate, the strong breakdown was not observed even at -100 V. The reverse leakage current of diodes based on SiC is over three orders of magnitude lower than that of sapphire substrate when the reverse voltage is above 50 V, which is due to the presence of low dislocation density and high thermal conductivity.

AB - GaN films were grown on sapphire and SiC substrates. The crystal qualities of GaN films were investigated by photoluminescence, atomic force microscopy, and electron-beam-induced current measurements, etc. It was found that the crystal quality of GaN on SiC is better than the one on sapphire. Ni/Au Schottky contacts were formed on the both samples. The electronic characteristics were obtained by current-voltage and capacitance-voltage measurements. Schottky diodes on sapphire substrate show breakdown voltage of -80 V. While for SiC substrate, the strong breakdown was not observed even at -100 V. The reverse leakage current of diodes based on SiC is over three orders of magnitude lower than that of sapphire substrate when the reverse voltage is above 50 V, which is due to the presence of low dislocation density and high thermal conductivity.

UR - http://www.scopus.com/inward/record.url?scp=0035886143&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035886143&partnerID=8YFLogxK

U2 - 10.1063/1.1410355

DO - 10.1063/1.1410355

M3 - Article

AN - SCOPUS:0035886143

VL - 79

SP - 2567

EP - 2569

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -