Abstract
Room-temperature recrystallization (self-annealing) of electroplated copper (Cu) films is investigated using three kinds of seed/barrier layers with nontexture and (111) texture. The as-plated films have almost the same texture as the seeds. The texture changes during self-annealing depend on the seed texture. The (111) texture of the self-annealing films increases for the film deposited on the nontexture seed layer, but decreases for the film deposited on (111) texture seed layers. For all the plated films, tensile stress increases after self-annealing, which corresponds to the film shrinkage. Recrystallization rate of the Cu film plated on the nontexture seed layer is higher than the one on the (111) texture seed. It is postulated that the reduction of grain boundary energy is the major driving force for film self-annealing and grain growth.
| Original language | English |
|---|---|
| Pages (from-to) | 4930-4935 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 86 |
| Issue number | 9 |
| Publication status | Published - 1999 Nov 1 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
Seed layer dependence of room-temperature recrystallization in electroplated copper films. / Ueno, Kazuyoshi; Ritzdorf, Tom; Grace, Scott.
In: Journal of Applied Physics, Vol. 86, No. 9, 01.11.1999, p. 4930-4935.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Seed layer dependence of room-temperature recrystallization in electroplated copper films
AU - Ueno, Kazuyoshi
AU - Ritzdorf, Tom
AU - Grace, Scott
PY - 1999/11/1
Y1 - 1999/11/1
N2 - Room-temperature recrystallization (self-annealing) of electroplated copper (Cu) films is investigated using three kinds of seed/barrier layers with nontexture and (111) texture. The as-plated films have almost the same texture as the seeds. The texture changes during self-annealing depend on the seed texture. The (111) texture of the self-annealing films increases for the film deposited on the nontexture seed layer, but decreases for the film deposited on (111) texture seed layers. For all the plated films, tensile stress increases after self-annealing, which corresponds to the film shrinkage. Recrystallization rate of the Cu film plated on the nontexture seed layer is higher than the one on the (111) texture seed. It is postulated that the reduction of grain boundary energy is the major driving force for film self-annealing and grain growth.
AB - Room-temperature recrystallization (self-annealing) of electroplated copper (Cu) films is investigated using three kinds of seed/barrier layers with nontexture and (111) texture. The as-plated films have almost the same texture as the seeds. The texture changes during self-annealing depend on the seed texture. The (111) texture of the self-annealing films increases for the film deposited on the nontexture seed layer, but decreases for the film deposited on (111) texture seed layers. For all the plated films, tensile stress increases after self-annealing, which corresponds to the film shrinkage. Recrystallization rate of the Cu film plated on the nontexture seed layer is higher than the one on the (111) texture seed. It is postulated that the reduction of grain boundary energy is the major driving force for film self-annealing and grain growth.
UR - http://www.scopus.com/inward/record.url?scp=0000776132&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000776132&partnerID=8YFLogxK
M3 - Article
VL - 86
SP - 4930
EP - 4935
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
ER -