Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer

Hideki Yokoi, T. Mizumoto, H. Masaki, N. Futakuchi, T. Ohtsuka, Y. Nakano

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Selective oxidation of an AlInAs layer grown on an InP substrate is studied with a view to enhancing the magneto-optic effect in an optical isolator with a semiconductor guiding layer. The isolator operates with a nonreciprocal phase shift in a magneto-optic waveguide. The waveguide with an AlInAs oxide cladding layer miniaturises the nonreciprocal phase shifter to several hundreds of microns.

Original languageEnglish
Pages (from-to)240-241
Number of pages2
JournalElectronics Letters
Volume37
Issue number4
DOIs
Publication statusPublished - 2001 Feb 15
Externally publishedYes

Fingerprint

Magnetooptical effects
Waveguides
Semiconductor materials
Oxidation
Phase shifters
Phase shift
Oxides
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer. / Yokoi, Hideki; Mizumoto, T.; Masaki, H.; Futakuchi, N.; Ohtsuka, T.; Nakano, Y.

In: Electronics Letters, Vol. 37, No. 4, 15.02.2001, p. 240-241.

Research output: Contribution to journalArticle

Yokoi, Hideki ; Mizumoto, T. ; Masaki, H. ; Futakuchi, N. ; Ohtsuka, T. ; Nakano, Y. / Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer. In: Electronics Letters. 2001 ; Vol. 37, No. 4. pp. 240-241.
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