Selective SiO2 film-formation technology using liquid-phase deposition for fully planarized multilevel interconnections

Tetsuya Homma, Takuya Katoh, Yoshiaki Yamada, Yukinobu Murao

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

A selective SiO2 film-formation technology using liquid-phase deposition (LPD) around room temperature for fully planarized multilevel interconnections is developed. The LPD technique utilizes supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution as a source liquid. The LPD-SiO2 films can be selectively formed on chemical vapor deposition (CVD) SiO2 underlayers in the trenches between photoresist patterns or tungsten wiring with photoresist as mask. For polysilicon patterns with photoresist masks, the LPD-SiO2 films creep along the polysilicon and photoresist sidewalls. The selective deposition mechanism can be explained as siloxane oligomers, which are formed in the supersaturated H2SiF6 aqueous solution, have different chemical reactivity between the photoresist and substrate surface. Global planarization of trenches between tungsten wiring is achieved using the selective LPD-SiO2 deposition technique. A fully planarized double- level tungsten interconnection is realized using both selective LPD-SiO2 film deposition and selective tungsten CVD via filling. Low contact resistance of ca. 0.3 Ω/unit is achieved for via holes 0.8 μm in diam.

Original languageEnglish
Pages (from-to)2410-2414
Number of pages5
JournalJournal of the Electrochemical Society
Volume140
Issue number8
Publication statusPublished - 1993 Aug
Externally publishedYes

Fingerprint

liquid phases
Photoresists
Liquids
photoresists
Tungsten
tungsten
wiring
Electric wiring
Polysilicon
Masks
Chemical vapor deposition
masks
vapor deposition
Siloxanes
aqueous solutions
Chemical reactivity
siloxanes
Contact resistance
contact resistance
oligomers

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Selective SiO2 film-formation technology using liquid-phase deposition for fully planarized multilevel interconnections. / Homma, Tetsuya; Katoh, Takuya; Yamada, Yoshiaki; Murao, Yukinobu.

In: Journal of the Electrochemical Society, Vol. 140, No. 8, 08.1993, p. 2410-2414.

Research output: Contribution to journalArticle

@article{b68d226898f044959b367a31cf890663,
title = "Selective SiO2 film-formation technology using liquid-phase deposition for fully planarized multilevel interconnections",
abstract = "A selective SiO2 film-formation technology using liquid-phase deposition (LPD) around room temperature for fully planarized multilevel interconnections is developed. The LPD technique utilizes supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution as a source liquid. The LPD-SiO2 films can be selectively formed on chemical vapor deposition (CVD) SiO2 underlayers in the trenches between photoresist patterns or tungsten wiring with photoresist as mask. For polysilicon patterns with photoresist masks, the LPD-SiO2 films creep along the polysilicon and photoresist sidewalls. The selective deposition mechanism can be explained as siloxane oligomers, which are formed in the supersaturated H2SiF6 aqueous solution, have different chemical reactivity between the photoresist and substrate surface. Global planarization of trenches between tungsten wiring is achieved using the selective LPD-SiO2 deposition technique. A fully planarized double- level tungsten interconnection is realized using both selective LPD-SiO2 film deposition and selective tungsten CVD via filling. Low contact resistance of ca. 0.3 Ω/unit is achieved for via holes 0.8 μm in diam.",
author = "Tetsuya Homma and Takuya Katoh and Yoshiaki Yamada and Yukinobu Murao",
year = "1993",
month = "8",
language = "English",
volume = "140",
pages = "2410--2414",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

TY - JOUR

T1 - Selective SiO2 film-formation technology using liquid-phase deposition for fully planarized multilevel interconnections

AU - Homma, Tetsuya

AU - Katoh, Takuya

AU - Yamada, Yoshiaki

AU - Murao, Yukinobu

PY - 1993/8

Y1 - 1993/8

N2 - A selective SiO2 film-formation technology using liquid-phase deposition (LPD) around room temperature for fully planarized multilevel interconnections is developed. The LPD technique utilizes supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution as a source liquid. The LPD-SiO2 films can be selectively formed on chemical vapor deposition (CVD) SiO2 underlayers in the trenches between photoresist patterns or tungsten wiring with photoresist as mask. For polysilicon patterns with photoresist masks, the LPD-SiO2 films creep along the polysilicon and photoresist sidewalls. The selective deposition mechanism can be explained as siloxane oligomers, which are formed in the supersaturated H2SiF6 aqueous solution, have different chemical reactivity between the photoresist and substrate surface. Global planarization of trenches between tungsten wiring is achieved using the selective LPD-SiO2 deposition technique. A fully planarized double- level tungsten interconnection is realized using both selective LPD-SiO2 film deposition and selective tungsten CVD via filling. Low contact resistance of ca. 0.3 Ω/unit is achieved for via holes 0.8 μm in diam.

AB - A selective SiO2 film-formation technology using liquid-phase deposition (LPD) around room temperature for fully planarized multilevel interconnections is developed. The LPD technique utilizes supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution as a source liquid. The LPD-SiO2 films can be selectively formed on chemical vapor deposition (CVD) SiO2 underlayers in the trenches between photoresist patterns or tungsten wiring with photoresist as mask. For polysilicon patterns with photoresist masks, the LPD-SiO2 films creep along the polysilicon and photoresist sidewalls. The selective deposition mechanism can be explained as siloxane oligomers, which are formed in the supersaturated H2SiF6 aqueous solution, have different chemical reactivity between the photoresist and substrate surface. Global planarization of trenches between tungsten wiring is achieved using the selective LPD-SiO2 deposition technique. A fully planarized double- level tungsten interconnection is realized using both selective LPD-SiO2 film deposition and selective tungsten CVD via filling. Low contact resistance of ca. 0.3 Ω/unit is achieved for via holes 0.8 μm in diam.

UR - http://www.scopus.com/inward/record.url?scp=0027640654&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027640654&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0027640654

VL - 140

SP - 2410

EP - 2414

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 8

ER -