SELF-ALIGNED AlInAs/GaInAs HBTs FOR DIGITAL IC APPLICATIONS.

S. Tanaka, A. Furukawa, T. Baba, K. Ohta, M. Madihian, K. Honjo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

An AlInAs/GaInAs HBT with a self-aligned device structure has been realized. The device has an emitter-base junction area as small as 1. 0 multiplied by 10 mu m. A 17-stage nonthreshold logic (NTL) ring oscillator is fabricated, which is claimed to be the first logic IC implemented with HBTs on InP substrates.

Original languageEnglish
Pages (from-to)872-873
Number of pages2
JournalElectronics Letters
Volume24
Issue number14
Publication statusPublished - 1988 Jul 7
Externally publishedYes

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Heterojunction bipolar transistors
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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tanaka, S., Furukawa, A., Baba, T., Ohta, K., Madihian, M., & Honjo, K. (1988). SELF-ALIGNED AlInAs/GaInAs HBTs FOR DIGITAL IC APPLICATIONS. Electronics Letters, 24(14), 872-873.

SELF-ALIGNED AlInAs/GaInAs HBTs FOR DIGITAL IC APPLICATIONS. / Tanaka, S.; Furukawa, A.; Baba, T.; Ohta, K.; Madihian, M.; Honjo, K.

In: Electronics Letters, Vol. 24, No. 14, 07.07.1988, p. 872-873.

Research output: Contribution to journalArticle

Tanaka, S, Furukawa, A, Baba, T, Ohta, K, Madihian, M & Honjo, K 1988, 'SELF-ALIGNED AlInAs/GaInAs HBTs FOR DIGITAL IC APPLICATIONS.', Electronics Letters, vol. 24, no. 14, pp. 872-873.
Tanaka S, Furukawa A, Baba T, Ohta K, Madihian M, Honjo K. SELF-ALIGNED AlInAs/GaInAs HBTs FOR DIGITAL IC APPLICATIONS. Electronics Letters. 1988 Jul 7;24(14):872-873.
Tanaka, S. ; Furukawa, A. ; Baba, T. ; Ohta, K. ; Madihian, M. ; Honjo, K. / SELF-ALIGNED AlInAs/GaInAs HBTs FOR DIGITAL IC APPLICATIONS. In: Electronics Letters. 1988 ; Vol. 24, No. 14. pp. 872-873.
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