Abstract
An AllnAs/GalnAs HBT with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 10 x 10 μm. A 17-stage non-threshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates.
Original language | English |
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Pages (from-to) | 872-873 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 24 |
Issue number | 14 |
DOIs | |
Publication status | Published - 1988 Jan 1 |
Externally published | Yes |
Keywords
- Bipolar devices
- Integrated circuits
- Semiconductor devices and materials
- Transistors
ASJC Scopus subject areas
- Electrical and Electronic Engineering