An AllnAs/GalnAs HBT with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 10 x 10 μm. A 17-stage non-threshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates.
- Bipolar devices
- Integrated circuits
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering