Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications

S. Tanaka; A. Furukawa; T. Baba; K. Ohta; M. Madihian; K. Honjo; A. Furukawa; T. Baba; K. Ohta

doi:10.1049/el:19880594

Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications

S. Tanaka, A. Furukawa, T. Baba, K. Ohta, M. Madihian, K. Honjo, A. Furukawa, T. Baba, K. Ohta

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

An AllnAs/GalnAs HBT with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 10 x 10 μm. A 17-stage non-threshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates.

Original language	English
Pages (from-to)	872-873
Number of pages	2
Journal	Electronics Letters
Volume	24
Issue number	14
DOIs	https://doi.org/10.1049/el:19880594
Publication status	Published - 1988 Jan 1

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Keywords

Bipolar devices
Integrated circuits
Semiconductor devices and materials
Transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Tanaka, S., Furukawa, A., Baba, T., Ohta, K., Madihian, M., Honjo, K., Furukawa, A., Baba, T., & Ohta, K. (1988). Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications. Electronics Letters, 24(14), 872-873. https://doi.org/10.1049/el:19880594

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AU - Ohta, K.

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Access to Document

10.1049/el:19880594