Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications

S. Tanaka; A. Furukawa; T. Baba; K. Ohta; M. Madihian; K. Honjo; A. Furukawa; T. Baba; K. Ohta

doi:10.1049/el:19880594

Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications

S. Tanaka, A. Furukawa, T. Baba, K. Ohta, M. Madihian, K. Honjo, A. Furukawa, T. Baba, K. Ohta

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

An AllnAs/GalnAs HBT with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 10 x 10 μm. A 17-stage non-threshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates.

Original language	English
Pages (from-to)	872-873
Number of pages	2
Journal	Electronics Letters
Volume	24
Issue number	14
DOIs	https://doi.org/10.1049/el:19880594
Publication status	Published - 1988 Jan 1
Externally published	Yes

Keywords

Bipolar devices
Integrated circuits
Semiconductor devices and materials
Transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19880594

Fingerprint Dive into the research topics of 'Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications'. Together they form a unique fingerprint.

Cite this

@article{4cce7b44bbff489d8ff395eb864cb63b,

title = "Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications",

abstract = "An AllnAs/GalnAs HBT with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 10 x 10 μm. A 17-stage non-threshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates.",

keywords = "Bipolar devices, Integrated circuits, Semiconductor devices and materials, Transistors",

author = "S. Tanaka and A. Furukawa and T. Baba and K. Ohta and M. Madihian and K. Honjo and A. Furukawa and T. Baba and K. Ohta",

year = "1988",

month = jan,

day = "1",

doi = "10.1049/el:19880594",

language = "English",

volume = "24",

pages = "872--873",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "14",

}

TY - JOUR

T1 - Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications

AU - Tanaka, S.

AU - Furukawa, A.

AU - Baba, T.

AU - Ohta, K.

AU - Madihian, M.

AU - Honjo, K.

AU - Furukawa, A.

AU - Baba, T.

AU - Ohta, K.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - An AllnAs/GalnAs HBT with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 10 x 10 μm. A 17-stage non-threshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates.

AB - An AllnAs/GalnAs HBT with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 10 x 10 μm. A 17-stage non-threshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates.

KW - Bipolar devices

KW - Integrated circuits

KW - Semiconductor devices and materials

KW - Transistors

UR - http://www.scopus.com/inward/record.url?scp=0024280722&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024280722&partnerID=8YFLogxK

U2 - 10.1049/el:19880594

DO - 10.1049/el:19880594

M3 - Article

AN - SCOPUS:0024280722

VL - 24

SP - 872

EP - 873

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 14

ER -