Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications

S. Tanaka, A. Furukawa, T. Baba, K. Ohta, M. Madihian, K. Honjo, A. Furukawa, T. Baba, K. Ohta

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

An AllnAs/GalnAs HBT with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 10 x 10 μm. A 17-stage non-threshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates.

Original languageEnglish
Pages (from-to)872-873
Number of pages2
JournalElectronics Letters
Volume24
Issue number14
DOIs
Publication statusPublished - 1988 Jan 1

Keywords

  • Bipolar devices
  • Integrated circuits
  • Semiconductor devices and materials
  • Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Tanaka, S., Furukawa, A., Baba, T., Ohta, K., Madihian, M., Honjo, K., Furukawa, A., Baba, T., & Ohta, K. (1988). Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications. Electronics Letters, 24(14), 872-873. https://doi.org/10.1049/el:19880594