Semiconducting properties of pentacene thin films studied by complex impedance, surface mobilty and photo-induced effects

A. Toriumi, T. Yokoyama, T. Nishimura, T. Yamada, K. Kita, K. Kyuno

Research output: Contribution to conferencePaper

Abstract

This paper discusses semiconducting properties of pentacene thin films focusing on complex impedance analysis, accurate carrier mobility determination, and carrier generation/annihilation processes, all of which are fundamental characteristics for any semiconductors. Although pentacene is considered to be a promising material for organic field effect transistors (FETs), there have not been many reports on basic properties as a semiconductor. For actual application and device modeling, quantitative analysis on the basis of experiments will be necessarily required. A carrier response in the semiconductor after majority carrier injection or generation in the film is a target to discuss, since it should affect a single device performance as well as circuit performance.

Original languageEnglish
Pages237-248
Number of pages12
Publication statusPublished - 2005 Dec 19
EventThin Film Transistor Technologies VII - Proceedings of the International Symposium - Honolulu, HI, United States
Duration: 2004 Oct 42004 Oct 6

Conference

ConferenceThin Film Transistor Technologies VII - Proceedings of the International Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/404/10/6

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Toriumi, A., Yokoyama, T., Nishimura, T., Yamada, T., Kita, K., & Kyuno, K. (2005). Semiconducting properties of pentacene thin films studied by complex impedance, surface mobilty and photo-induced effects. 237-248. Paper presented at Thin Film Transistor Technologies VII - Proceedings of the International Symposium, Honolulu, HI, United States.