Si - O - Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2

Shuji Munekuni, Nobuyuki Dohguchi, Hiroyuki Nishikawa, Yoshimichi Ohki, Kaya Nagasawa, Yoshimasa Hama

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Mechanical stress is applied to high-purity amorphous SiO2 samples by means of fracturing. The electron-spin-resonance spectra suggest that the formation of a majority of paramagnetic defects is from cleavage of Si - O - Si bridges in the glass network, but there are some sample-to-sample variances in fracture-induced paramagnetic defects, suggesting cleavage of differing chemical bonding states in the samples. Nonstoichiometric bonds, ≡Si - Si≡ and ≡Si - O - O - Si≡, are assumed to be one reason for the sample dependency. Formation of Si - O - Si strained bonds from mechanical fracturing is confirmed from sequential γ-ray irradiation and heat annealing experiments. The Si - O - Si strained bond is approximately annealed at about 300°C. By comparing the fracture-induced defects for glass preforms and optical fibers, the change in chemical bonding state can be analyzed. Analysis of mechanical-fracture-induced defects is a strong technique for elucidation of the chemical bonding state of silica glass.

Original languageEnglish
Pages (from-to)5054-5062
Number of pages9
JournalJournal of Applied Physics
Volume70
Issue number9
DOIs
Publication statusPublished - 1991
Externally publishedYes

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fracturing
defects
cleavage
preforms
glass
silica glass
rays
electron paramagnetic resonance
purity
optical fibers
heat
irradiation
annealing
fibers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Si - O - Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2. / Munekuni, Shuji; Dohguchi, Nobuyuki; Nishikawa, Hiroyuki; Ohki, Yoshimichi; Nagasawa, Kaya; Hama, Yoshimasa.

In: Journal of Applied Physics, Vol. 70, No. 9, 1991, p. 5054-5062.

Research output: Contribution to journalArticle

Munekuni, Shuji ; Dohguchi, Nobuyuki ; Nishikawa, Hiroyuki ; Ohki, Yoshimichi ; Nagasawa, Kaya ; Hama, Yoshimasa. / Si - O - Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2. In: Journal of Applied Physics. 1991 ; Vol. 70, No. 9. pp. 5054-5062.
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AU - Munekuni, Shuji

AU - Dohguchi, Nobuyuki

AU - Nishikawa, Hiroyuki

AU - Ohki, Yoshimichi

AU - Nagasawa, Kaya

AU - Hama, Yoshimasa

PY - 1991

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