Si-O-Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2

S. Munekuni, N. Nohguchi, H. Nishikawa, Y. Ohki, K. Nagasawa, Y. Hama

Research output: Contribution to journalArticle

24 Citations (Scopus)
Original languageEnglish
Pages (from-to)5054-5062
JournalJournal of Applied Physics
Volume70
Publication statusPublished - 1991 Nov 1

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