Si-O-Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2

S. Munekuni, N. Nohguchi, H. Nishikawa, Y. Ohki, K. Nagasawa, Y. Hama

Research output: Contribution to journalArticle

24 Citations (Scopus)
Original languageEnglish
Pages (from-to)5054-5062
JournalJournal of Applied Physics
Volume70
Publication statusPublished - 1991 Nov 1

Cite this

Si-O-Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2. / Munekuni, S.; Nohguchi, N.; Nishikawa, H.; Ohki, Y.; Nagasawa, K.; Hama, Y.

In: Journal of Applied Physics, Vol. 70, 01.11.1991, p. 5054-5062.

Research output: Contribution to journalArticle

Munekuni, S. ; Nohguchi, N. ; Nishikawa, H. ; Ohki, Y. ; Nagasawa, K. ; Hama, Y. / Si-O-Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2. In: Journal of Applied Physics. 1991 ; Vol. 70. pp. 5054-5062.
@article{7ffbec4e36824f6980293adf7c026272,
title = "Si-O-Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2",
author = "S. Munekuni and N. Nohguchi and H. Nishikawa and Y. Ohki and K. Nagasawa and Y. Hama",
year = "1991",
month = "11",
day = "1",
language = "English",
volume = "70",
pages = "5054--5062",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Si-O-Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2

AU - Munekuni, S.

AU - Nohguchi, N.

AU - Nishikawa, H.

AU - Ohki, Y.

AU - Nagasawa, K.

AU - Hama, Y.

PY - 1991/11/1

Y1 - 1991/11/1

M3 - Article

VL - 70

SP - 5054

EP - 5062

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

ER -