Sidegating effect of GaN MESFETs grown on sapphire substrate

T. Egawa, Hiroyasu Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A GaN metal semiconductor field effect transistor (MESFET) with 2μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585cm2/V·s with a carrier concentration of 1.1 x 1017cm-3 at 300K, and 1217cm2/V·s with 2.4 ×1016cm-3 at 77K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.

Original languageEnglish
Pages (from-to)598-600
Number of pages3
JournalElectronics Letters
Volume34
Issue number6
Publication statusPublished - 1998 Mar 19
Externally publishedYes

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MESFET devices
Sapphire
Electron mobility
Transconductance
Substrates
Carrier concentration
Electrodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Egawa, T., Ishikawa, H., Jimbo, T., & Umeno, M. (1998). Sidegating effect of GaN MESFETs grown on sapphire substrate. Electronics Letters, 34(6), 598-600.

Sidegating effect of GaN MESFETs grown on sapphire substrate. / Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.; Umeno, M.

In: Electronics Letters, Vol. 34, No. 6, 19.03.1998, p. 598-600.

Research output: Contribution to journalArticle

Egawa, T, Ishikawa, H, Jimbo, T & Umeno, M 1998, 'Sidegating effect of GaN MESFETs grown on sapphire substrate', Electronics Letters, vol. 34, no. 6, pp. 598-600.
Egawa, T. ; Ishikawa, Hiroyasu ; Jimbo, T. ; Umeno, M. / Sidegating effect of GaN MESFETs grown on sapphire substrate. In: Electronics Letters. 1998 ; Vol. 34, No. 6. pp. 598-600.
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