Abstract
Micromachining of silicon surface and near-surface regions by electron-beam lithography (EBL) and reactive ion dry-etching (RIE), as well as by laser microfabrication techniques is described. Combination of EBL and RIE techniques is used to fabricate quasi two-dimensional (2D) photonic crystal (PhC) structures with aspect ratios at approximately 15. Structural and optical properties of PhC samples with 2D honeycomb lattice are reported, and a complete photonic band gap at wavelengths approximately 2.16 μm is identified from the optical transmission data. Next, laser microfabrication of silicon by femtosecond laser pulses is reported. Processing of silicon under low air pressure conditions (≃5 Torr) is demonstrated to be essentially debris-free process, highly suitable for cutting and scribing of wafers as well for hole drilling. Removal of thin films from the silicon surface by a single-shot laser ablation using mask projection is also demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 445-451 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 438-439 |
| DOIs | |
| Publication status | Published - 2003 Aug 22 |
| Externally published | Yes |
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Keywords
- Laser ablation
- Nanostructures
- Optoelectronic devices
- Silicon
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Silicon surface processing techniques for micro-systems fabrication. / Mizeikis, Vygantas; Juodkazis, Saulius; Ye, Jia Yu; Rode, Andrei; Matsuo, Shigeki; Misawa, Hiroaki.
In: Thin Solid Films, Vol. 438-439, 22.08.2003, p. 445-451.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Silicon surface processing techniques for micro-systems fabrication
AU - Mizeikis, Vygantas
AU - Juodkazis, Saulius
AU - Ye, Jia Yu
AU - Rode, Andrei
AU - Matsuo, Shigeki
AU - Misawa, Hiroaki
PY - 2003/8/22
Y1 - 2003/8/22
N2 - Micromachining of silicon surface and near-surface regions by electron-beam lithography (EBL) and reactive ion dry-etching (RIE), as well as by laser microfabrication techniques is described. Combination of EBL and RIE techniques is used to fabricate quasi two-dimensional (2D) photonic crystal (PhC) structures with aspect ratios at approximately 15. Structural and optical properties of PhC samples with 2D honeycomb lattice are reported, and a complete photonic band gap at wavelengths approximately 2.16 μm is identified from the optical transmission data. Next, laser microfabrication of silicon by femtosecond laser pulses is reported. Processing of silicon under low air pressure conditions (≃5 Torr) is demonstrated to be essentially debris-free process, highly suitable for cutting and scribing of wafers as well for hole drilling. Removal of thin films from the silicon surface by a single-shot laser ablation using mask projection is also demonstrated.
AB - Micromachining of silicon surface and near-surface regions by electron-beam lithography (EBL) and reactive ion dry-etching (RIE), as well as by laser microfabrication techniques is described. Combination of EBL and RIE techniques is used to fabricate quasi two-dimensional (2D) photonic crystal (PhC) structures with aspect ratios at approximately 15. Structural and optical properties of PhC samples with 2D honeycomb lattice are reported, and a complete photonic band gap at wavelengths approximately 2.16 μm is identified from the optical transmission data. Next, laser microfabrication of silicon by femtosecond laser pulses is reported. Processing of silicon under low air pressure conditions (≃5 Torr) is demonstrated to be essentially debris-free process, highly suitable for cutting and scribing of wafers as well for hole drilling. Removal of thin films from the silicon surface by a single-shot laser ablation using mask projection is also demonstrated.
KW - Laser ablation
KW - Nanostructures
KW - Optoelectronic devices
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=0043028632&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0043028632&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(03)00803-4
DO - 10.1016/S0040-6090(03)00803-4
M3 - Article
VL - 438-439
SP - 445
EP - 451
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -