Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs

H. Hanawa, H. Onodera, A. Nakajima, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Two-dimensional analysis of lag phenomena, current collapse and breakdown voltages in source-field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, and the results are compared with those for the case of gate-field-plate structure. It is shown that the reduction rate of drain-lag is similar between the two structures, but the reduction rates of gate lag and current collapse are smaller for the source-field-plate structure. This is because the electric field at the drain edge of the gate becomes higher in the off state and the trapping effects become more significant. For this reason, an off-state breakdown voltage is a little lower in the source-field-plate structure. It is suggested that there is an optimum thickness of SiN passivation layer to minimize the buffer-related current collapse in both structures.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA
Duration: 2013 Apr 142013 Apr 18

Other

Other2013 IEEE International Reliability Physics Symposium, IRPS 2013
CityMonterey, CA
Period13/4/1413/4/18

Fingerprint

High electron mobility transistors
Electric breakdown
Buffer layers
Passivation
Electric fields

Keywords

  • breakdown voltage
  • current collapse
  • field plate
  • GaN
  • HEMT
  • lag phenomena
  • two-dimensional analysis

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hanawa, H., Onodera, H., Nakajima, A., & Horio, K. (2013). Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs. In IEEE International Reliability Physics Symposium Proceedings [6532058] https://doi.org/10.1109/IRPS.2013.6532058

Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs. / Hanawa, H.; Onodera, H.; Nakajima, A.; Horio, Kazushige.

IEEE International Reliability Physics Symposium Proceedings. 2013. 6532058.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hanawa, H, Onodera, H, Nakajima, A & Horio, K 2013, Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs. in IEEE International Reliability Physics Symposium Proceedings., 6532058, 2013 IEEE International Reliability Physics Symposium, IRPS 2013, Monterey, CA, 13/4/14. https://doi.org/10.1109/IRPS.2013.6532058
Hanawa H, Onodera H, Nakajima A, Horio K. Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs. In IEEE International Reliability Physics Symposium Proceedings. 2013. 6532058 https://doi.org/10.1109/IRPS.2013.6532058
Hanawa, H. ; Onodera, H. ; Nakajima, A. ; Horio, Kazushige. / Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs. IEEE International Reliability Physics Symposium Proceedings. 2013.
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