Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs

H. Hanawa, H. Onodera, A. Nakajima, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Two-dimensional analysis of lag phenomena, current collapse and breakdown voltages in source-field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, and the results are compared with those for the case of gate-field-plate structure. It is shown that the reduction rate of drain-lag is similar between the two structures, but the reduction rates of gate lag and current collapse are smaller for the source-field-plate structure. This is because the electric field at the drain edge of the gate becomes higher in the off state and the trapping effects become more significant. For this reason, an off-state breakdown voltage is a little lower in the source-field-plate structure. It is suggested that there is an optimum thickness of SiN passivation layer to minimize the buffer-related current collapse in both structures.

Original languageEnglish
Title of host publication2013 IEEE International Reliability Physics Symposium, IRPS 2013
PagesCD.1.1-CD.1.5
DOIs
Publication statusPublished - 2013 Aug 7
Event2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States
Duration: 2013 Apr 142013 Apr 18

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2013 IEEE International Reliability Physics Symposium, IRPS 2013
CountryUnited States
CityMonterey, CA
Period13/4/1413/4/18

Keywords

  • GaN
  • HEMT
  • breakdown voltage
  • current collapse
  • field plate
  • lag phenomena
  • two-dimensional analysis

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Hanawa, H., Onodera, H., Nakajima, A., & Horio, K. (2013). Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs. In 2013 IEEE International Reliability Physics Symposium, IRPS 2013 (pp. CD.1.1-CD.1.5). [6532058] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2013.6532058