Simplified Simulation of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

K.Horio K.Horio, Y.Fuseya Y.Fuseya, H.Kusuki H.Kusuki, H.Yanai H.Yanai, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	41-42
Journal	Proceedings of IEEE NUPAD III Conference, Hawaii, USA
Publication status	Published - 1990 Jun 1

Cite this

@article{5529b249c9934739a08a4d1a1414123b,

title = "Simplified Simulation of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels",

author = "K.Horio K.Horio and Y.Fuseya Y.Fuseya and H.Kusuki H.Kusuki and H.Yanai H.Yanai and Kazushige Horio",

year = "1990",

month = jun,

day = "1",

language = "English",

pages = "41--42",

journal = "Proceedings of IEEE NUPAD III Conference, Hawaii, USA",

}

TY - JOUR

T1 - Simplified Simulation of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

AU - K.Horio, K.Horio

AU - Y.Fuseya, Y.Fuseya

AU - H.Kusuki, H.Kusuki

AU - H.Yanai, H.Yanai

AU - Horio, Kazushige

PY - 1990/6/1

Y1 - 1990/6/1

M3 - Article

SP - 41

EP - 42

JO - Proceedings of IEEE NUPAD III Conference, Hawaii, USA

JF - Proceedings of IEEE NUPAD III Conference, Hawaii, USA

ER -