Simplified simulations of GaAs MESFET's with semi-insulating substrate compensated by deep levels

Kazushige Horio, Yasuji Fuseya, Hiroyuki Kusuki, Hisayoshi Yanai

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Current-voltage characteristics of GaAs MESFETs (with p-buffer layers) on semi-insulating substrates compensated by deep levels are simulated by two-carrier and one-carrier models. For a thicker p-buffer layer or for higher acceptor density in the substrate, the drain current becomes lower because the substrate current is reduced. The one-carrier model also gives reasonable results for a case with a hole-trap substrate. Small-signal parameters of GaAs MESFETs on various types of substrates are also simulated. For a thicker p-buffer layer or for higher acceptor densities in the semi-insulating substrates, the substrate current is reduced, and both transconductance and cutoff frequency become higher. It is concluded that, to utilize the high-speed and high-frequency performance of GaAs MESFETs, acceptor densities in the substrate should be made high.

Original languageEnglish
Pages (from-to)1295-1302
Number of pages8
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume10
Issue number10
DOIs
Publication statusPublished - 1991 Oct

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Substrates
Buffer layers
Hole traps
Drain current
Cutoff frequency
Transconductance
Current voltage characteristics

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Computer Science Applications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Simplified simulations of GaAs MESFET's with semi-insulating substrate compensated by deep levels. / Horio, Kazushige; Fuseya, Yasuji; Kusuki, Hiroyuki; Yanai, Hisayoshi.

In: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 10, No. 10, 10.1991, p. 1295-1302.

Research output: Contribution to journalArticle

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