Simplified Simulations of GaAs MESFET's with Semi-Insulating Substrate Compensated by Deep Levels

Kazushige Horio, Yasuji Fuseya, Hiroyuki Kusuki, Hisayoshi Yanai

Research output: Contribution to journalArticle

8 Citations (Scopus)


Current-voltage characteristics of GaAs metal-semiconductor field effect transistors (MESFET's) (with p-buffer layers) on semi-insulating substrates compensated by deep levels are simulated by two-carrier and one-carrier models. For a thicker p-buffer layer or for higher acceptor density in the substrate, the drain current becomes lower because the substrate current is reduced. The one-carrier model also gives reasonable results for a case with a hole-trap substrate. Small-signal parameters of GaAs MESFET's on various types of substrates are also simulated. It is found that for a thicker p-buffer layer or for higher acceptor densities in the semi-insulating substrates, the substrate current is reduced, and both transconductance and cutoff frequency become higher. It is concluded that to utilize high-speed and high-frequency performance of GaAs MESFET's acceptor densities in the substrate should be made high.

Original languageEnglish
Pages (from-to)1295-1302
Number of pages8
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Issue number10
Publication statusPublished - 1991 Oct


ASJC Scopus subject areas

  • Software
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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