Simplified Simulations of GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

K.Horio K.Horio, Y.Fuseya Y.Fuseya, H.Kusuki H.Kusuki, H.Yanai H.Yanai, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1295-1302
Journal	IEEE Trans.Computer-Aided Design
Volume	10
Publication status	Published - 1991 Oct 1

Cite this

@article{08a2008a9ab34488af1dc4f0461bceab,

title = "Simplified Simulations of GaAs MESFET{\textquoteright}s with Semi-insulating Substrates Compensated by Deep Levels",

author = "K.Horio K.Horio and Y.Fuseya Y.Fuseya and H.Kusuki H.Kusuki and H.Yanai H.Yanai and Kazushige Horio",

year = "1991",

month = oct,

day = "1",

language = "English",

volume = "10",

pages = "1295--1302",

journal = "IEEE Trans.Computer-Aided Design",

}

TY - JOUR

T1 - Simplified Simulations of GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

AU - K.Horio, K.Horio

AU - Y.Fuseya, Y.Fuseya

AU - H.Kusuki, H.Kusuki

AU - H.Yanai, H.Yanai

AU - Horio, Kazushige

PY - 1991/10/1

Y1 - 1991/10/1

M3 - Article

VL - 10

SP - 1295

EP - 1302

JO - IEEE Trans.Computer-Aided Design

JF - IEEE Trans.Computer-Aided Design

ER -