SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor

Takaya Akashi; Miho Kasajima; Hajime Kiyono; Shiro Shimada

doi:10.2109/jcersj2.116.960

SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor

Takaya Akashi, Miho Kasajima, Hajime Kiyono, Shiro Shimada

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Double oxidation of SiC single crystal was carried out in oxidizing gas (O₂ or H₂O) at 1673 K first and then in isotopic water (H₂¹⁸O or D₂O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO₂/SiC interface when SiC was oxidized in Ar/D₂O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO₂ layer to the SiO₂/SiC interface. Large amount of carbon in SiO₂ scale near the SiO₂/SiC interface after oxidation in dry Ar/O ₂ gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O₂ atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H₂¹⁸O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO₂ scale was promoted during oxidation in atmosphere containing water vapor.

Original language	English
Pages (from-to)	960-964
Number of pages	5
Journal	Journal of the Ceramic Society of Japan
Volume	116
Issue number	1357
DOIs	https://doi.org/10.2109/jcersj2.116.960
Publication status	Published - 2008 Sep
Externally published	Yes

Keywords

Diffusion
Isotope
Oxidation
SIMS
Silica
Silicon carbide
Water

ASJC Scopus subject areas

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor",

abstract = "Double oxidation of SiC single crystal was carried out in oxidizing gas (O2 or H2O) at 1673 K first and then in isotopic water (H218O or D2O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO2/SiC interface when SiC was oxidized in Ar/D2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO2 layer to the SiO2/SiC interface. Large amount of carbon in SiO2 scale near the SiO2/SiC interface after oxidation in dry Ar/O 2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H218O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO2 scale was promoted during oxidation in atmosphere containing water vapor.",

keywords = "Diffusion, Isotope, Oxidation, SIMS, Silica, Silicon carbide, Water",

author = "Takaya Akashi and Miho Kasajima and Hajime Kiyono and Shiro Shimada",

year = "2008",

month = sep,

doi = "10.2109/jcersj2.116.960",

language = "English",

volume = "116",

pages = "960--964",

journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",

issn = "0914-5400",

publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",

number = "1357",

}

TY - JOUR

T1 - SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor

AU - Akashi, Takaya

AU - Kasajima, Miho

AU - Kiyono, Hajime

AU - Shimada, Shiro

PY - 2008/9

Y1 - 2008/9

N2 - Double oxidation of SiC single crystal was carried out in oxidizing gas (O2 or H2O) at 1673 K first and then in isotopic water (H218O or D2O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO2/SiC interface when SiC was oxidized in Ar/D2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO2 layer to the SiO2/SiC interface. Large amount of carbon in SiO2 scale near the SiO2/SiC interface after oxidation in dry Ar/O 2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H218O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO2 scale was promoted during oxidation in atmosphere containing water vapor.

AB - Double oxidation of SiC single crystal was carried out in oxidizing gas (O2 or H2O) at 1673 K first and then in isotopic water (H218O or D2O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO2/SiC interface when SiC was oxidized in Ar/D2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO2 layer to the SiO2/SiC interface. Large amount of carbon in SiO2 scale near the SiO2/SiC interface after oxidation in dry Ar/O 2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H218O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO2 scale was promoted during oxidation in atmosphere containing water vapor.

KW - Diffusion

KW - Isotope

KW - Oxidation

KW - SIMS

KW - Silica

KW - Silicon carbide

KW - Water

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