Abstract
Double oxidation of SiC single crystal was carried out in oxidizing gas (O2 or H2O) at 1673 K first and then in isotopic water (H2 18O or D2O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO2/SiC interface when SiC was oxidized in Ar/D2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO2 layer to the SiO2/SiC interface. Large amount of carbon in SiO2 scale near the SiO2/SiC interface after oxidation in dry Ar/O 2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H2 18O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO2 scale was promoted during oxidation in atmosphere containing water vapor.
| Original language | English |
|---|---|
| Pages (from-to) | 960-964 |
| Number of pages | 5 |
| Journal | Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan |
| Volume | 116 |
| Issue number | 1357 |
| Publication status | Published - 2008 Sep |
| Externally published | Yes |
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Keywords
- Diffusion
- Isotope
- Oxidation
- Silica
- Silicon carbide
- SIMS
- Water
ASJC Scopus subject areas
- Ceramics and Composites
Cite this
SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor. / Akashi, Takaya; Kasajima, Miho; Kiyono, Hajime; Shimada, Shiro.
In: Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan, Vol. 116, No. 1357, 09.2008, p. 960-964.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor
AU - Akashi, Takaya
AU - Kasajima, Miho
AU - Kiyono, Hajime
AU - Shimada, Shiro
PY - 2008/9
Y1 - 2008/9
N2 - Double oxidation of SiC single crystal was carried out in oxidizing gas (O2 or H2O) at 1673 K first and then in isotopic water (H2 18O or D2O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO2/SiC interface when SiC was oxidized in Ar/D2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO2 layer to the SiO2/SiC interface. Large amount of carbon in SiO2 scale near the SiO2/SiC interface after oxidation in dry Ar/O 2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H2 18O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO2 scale was promoted during oxidation in atmosphere containing water vapor.
AB - Double oxidation of SiC single crystal was carried out in oxidizing gas (O2 or H2O) at 1673 K first and then in isotopic water (H2 18O or D2O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO2/SiC interface when SiC was oxidized in Ar/D2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO2 layer to the SiO2/SiC interface. Large amount of carbon in SiO2 scale near the SiO2/SiC interface after oxidation in dry Ar/O 2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H2 18O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO2 scale was promoted during oxidation in atmosphere containing water vapor.
KW - Diffusion
KW - Isotope
KW - Oxidation
KW - Silica
KW - Silicon carbide
KW - SIMS
KW - Water
UR - http://www.scopus.com/inward/record.url?scp=51149113325&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51149113325&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:51149113325
VL - 116
SP - 960
EP - 964
JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
SN - 0914-5400
IS - 1357
ER -