SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor

Takaya Akashi, Miho Kasajima, Hajime Kiyono, Shiro Shimada

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Double oxidation of SiC single crystal was carried out in oxidizing gas (O2 or H2O) at 1673 K first and then in isotopic water (H218O or D2O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO2/SiC interface when SiC was oxidized in Ar/D2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO2 layer to the SiO2/SiC interface. Large amount of carbon in SiO2 scale near the SiO2/SiC interface after oxidation in dry Ar/O 2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H218O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO2 scale was promoted during oxidation in atmosphere containing water vapor.

Original languageEnglish
Pages (from-to)960-964
Number of pages5
JournalJournal of the Ceramic Society of Japan
Volume116
Issue number1357
DOIs
Publication statusPublished - 2008 Sep

Keywords

  • Diffusion
  • Isotope
  • Oxidation
  • SIMS
  • Silica
  • Silicon carbide
  • Water

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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