Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs

Kazushige Horio, H. Onodera, T. Fukai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs with a back electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in reducing current collapse when the acceptor density is high. On the other hand, the introduction of back electrode is effective in reducing current collapse particularly when the acceptor density is relatively low. It is also shown that applying a negative voltage to the back electrode is not so effective in reducing current collapse when the deep donor acts as an electron trap.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages497-500
Number of pages4
Volume2
Publication statusPublished - 2013
EventNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC
Duration: 2013 May 122013 May 16

Other

OtherNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
CityWashington, DC
Period13/5/1213/5/16

Keywords

  • Back electrode
  • Current collapse
  • Field plate
  • GaN
  • HEMT

ASJC Scopus subject areas

  • Biotechnology

Cite this

Horio, K., Onodera, H., & Fukai, T. (2013). Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs. In Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 (Vol. 2, pp. 497-500)

Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs. / Horio, Kazushige; Onodera, H.; Fukai, T.

Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. Vol. 2 2013. p. 497-500.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horio, K, Onodera, H & Fukai, T 2013, Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs. in Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. vol. 2, pp. 497-500, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, Washington, DC, 13/5/12.
Horio K, Onodera H, Fukai T. Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs. In Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. Vol. 2. 2013. p. 497-500
Horio, Kazushige ; Onodera, H. ; Fukai, T. / Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs. Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. Vol. 2 2013. pp. 497-500
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