Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs

K. Horio, H. Onodera, T. Fukai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs with a back electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in reducing current collapse when the acceptor density is high. On the other hand, the introduction of back electrode is effective in reducing current collapse particularly when the acceptor density is relatively low. It is also shown that applying a negative voltage to the back electrode is not so effective in reducing current collapse when the deep donor acts as an electron trap.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages497-500
Number of pages4
Publication statusPublished - 2013 Aug 9
EventNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
Duration: 2013 May 122013 May 16

Publication series

NameTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume2

Conference

ConferenceNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
CountryUnited States
CityWashington, DC
Period13/5/1213/5/16

Keywords

  • Back electrode
  • Current collapse
  • Field plate
  • GaN
  • HEMT

ASJC Scopus subject areas

  • Biotechnology

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  • Cite this

    Horio, K., Onodera, H., & Fukai, T. (2013). Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs. In Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 (pp. 497-500). (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; Vol. 2).