Simulation of breakdown characteristics of AlGaN/GaN hemts with double passivation layers

K. Nakano, H. Hanawa, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional analysis of off-state drain currentdrain voltage characteristics in AlGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high-£ dielectric) and double passivation layers (SiN and high-jfc dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high-k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high-k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.

Original languageEnglish
Title of host publicationTechConnect Briefs 2018 - Informatics, Electronics and Microsystems
EditorsMatthew Laudon, Fiona Case, Bart Romanowicz, Fiona Case
PublisherTechConnect
Pages20-23
Number of pages4
Volume4
ISBN (Electronic)9780998878256
Publication statusPublished - 2018 Jan 1
Event11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference - Anaheim, United States
Duration: 2018 May 132018 May 16

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference
CountryUnited States
CityAnaheim
Period18/5/1318/5/16

Keywords

  • Breakdown voltage
  • GaN
  • HEMT
  • High-k passivation layer

ASJC Scopus subject areas

  • Materials Science(all)

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  • Cite this

    Nakano, K., Hanawa, H., & Horio, K. (2018). Simulation of breakdown characteristics of AlGaN/GaN hemts with double passivation layers. In M. Laudon, F. Case, B. Romanowicz, & F. Case (Eds.), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems (Vol. 4, pp. 20-23). TechConnect.