Simulation of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers

K. Horio, H. Hanawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional analysis of off-state drain currentdrain voltage characteristics in AlGaN/GaN HEMTs is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness, because the electric field at the drain edge of the gate is reduced. It is also shown that in the case of double passivation layers, the breakdown voltage becomes higher when the relative permittivity of the second passivation layer becomes higher.

LanguageEnglish
Title of host publicationInformatics, Electronics and Microsystems - TechConnect Briefs 2017
PublisherTechConnect
Pages39-42
Number of pages4
Volume4
ISBN (Electronic)9780998878218
StatePublished - 2017
Event11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States
Duration: 2017 May 142017 May 17

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period17/5/1417/5/17

Fingerprint

High electron mobility transistors
Electric breakdown
Passivation
Permittivity
Electric fields
aluminum gallium nitride
Electric potential

Keywords

  • Breakdown voltage
  • Double passivation layer
  • GaN HEMT
  • High-k dielectric

ASJC Scopus subject areas

  • Fuel Technology
  • Surfaces, Coatings and Films
  • Biotechnology
  • Fluid Flow and Transfer Processes

Cite this

Horio, K., & Hanawa, H. (2017). Simulation of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers. In Informatics, Electronics and Microsystems - TechConnect Briefs 2017 (Vol. 4, pp. 39-42). TechConnect.

Simulation of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers. / Horio, K.; Hanawa, H.

Informatics, Electronics and Microsystems - TechConnect Briefs 2017. Vol. 4 TechConnect, 2017. p. 39-42.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horio, K & Hanawa, H 2017, Simulation of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers. in Informatics, Electronics and Microsystems - TechConnect Briefs 2017. vol. 4, TechConnect, pp. 39-42, 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference, Washington, United States, 17/5/14.
Horio K, Hanawa H. Simulation of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers. In Informatics, Electronics and Microsystems - TechConnect Briefs 2017. Vol. 4. TechConnect. 2017. p. 39-42.
Horio, K. ; Hanawa, H./ Simulation of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers. Informatics, Electronics and Microsystems - TechConnect Briefs 2017. Vol. 4 TechConnect, 2017. pp. 39-42
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