Simulation of buffer current effects on breakdown voltage in AIGaN/GaN HEMTs having passivation layers with different permittivity

Y. Satoh, H. Hanawa, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A two-dimensional simulation of off-state breakdown characteristics in AIGaN/GaN HEMTs is performed, with the relative permittivity of passivation layer ϵr as a parameter. The simulation is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown chracteristics. It is shown that when ϵr is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵr increases.

Original languageEnglish
Title of host publicationAdvanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016
PublisherTechConnect
Pages113-116
Number of pages4
Volume4
ISBN (Electronic)9780997511734
Publication statusPublished - 2016
Event10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States
Duration: 2016 May 222016 May 25

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period16/5/2216/5/25

Fingerprint

High electron mobility transistors
Electric breakdown
Passivation
Leakage currents
Buffers
Impact ionization
Permittivity
Electric fields

Keywords

  • Breakdown voltage
  • Buffer leakage current
  • Gan HEMT
  • Passivation layer
  • Two-dimensional analysis

ASJC Scopus subject areas

  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Surfaces, Coatings and Films
  • Fuel Technology

Cite this

Satoh, Y., Hanawa, H., & Horio, K. (2016). Simulation of buffer current effects on breakdown voltage in AIGaN/GaN HEMTs having passivation layers with different permittivity. In Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016 (Vol. 4, pp. 113-116). TechConnect.

Simulation of buffer current effects on breakdown voltage in AIGaN/GaN HEMTs having passivation layers with different permittivity. / Satoh, Y.; Hanawa, H.; Horio, Kazushige.

Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. Vol. 4 TechConnect, 2016. p. 113-116.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Satoh, Y, Hanawa, H & Horio, K 2016, Simulation of buffer current effects on breakdown voltage in AIGaN/GaN HEMTs having passivation layers with different permittivity. in Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. vol. 4, TechConnect, pp. 113-116, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference, Washington, United States, 16/5/22.
Satoh Y, Hanawa H, Horio K. Simulation of buffer current effects on breakdown voltage in AIGaN/GaN HEMTs having passivation layers with different permittivity. In Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. Vol. 4. TechConnect. 2016. p. 113-116
Satoh, Y. ; Hanawa, H. ; Horio, Kazushige. / Simulation of buffer current effects on breakdown voltage in AIGaN/GaN HEMTs having passivation layers with different permittivity. Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. Vol. 4 TechConnect, 2016. pp. 113-116
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