Abstract
Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in AlGaN/GaN HEMTs, an acceptor density in a semi-insulating buffer layer should be made low.
| Original language | English |
|---|---|
| Title of host publication | 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings |
| Pages | 687-690 |
| Number of pages | 4 |
| Volume | 3 |
| Publication status | Published - 2007 |
| Event | 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA Duration: 2007 May 20 → 2007 May 24 |
Other
| Other | 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 |
|---|---|
| City | Santa Clara, CA |
| Period | 07/5/20 → 07/5/24 |
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Keywords
- AlGaN/GaN HEMT
- Current slump
- Deep level
- Device simulation
ASJC Scopus subject areas
- Mechanical Engineering
Cite this
Simulation of buffer-related current slump in AlGaN/GaN HEMTs. / Horio, Kazushige.
2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings. Vol. 3 2007. p. 687-690.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Simulation of buffer-related current slump in AlGaN/GaN HEMTs
AU - Horio, Kazushige
PY - 2007
Y1 - 2007
N2 - Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in AlGaN/GaN HEMTs, an acceptor density in a semi-insulating buffer layer should be made low.
AB - Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in AlGaN/GaN HEMTs, an acceptor density in a semi-insulating buffer layer should be made low.
KW - AlGaN/GaN HEMT
KW - Current slump
KW - Deep level
KW - Device simulation
UR - http://www.scopus.com/inward/record.url?scp=34547991208&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547991208&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:34547991208
SN - 1420063421
SN - 9781420063424
SN - 1420061844
SN - 9781420061840
VL - 3
SP - 687
EP - 690
BT - 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
ER -