Abstract
Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in AlGaN/GaN HEMTs, an acceptor density in a semi-insulating buffer layer should be made low.
| Original language | English |
|---|---|
| Title of host publication | 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings |
| Pages | 687-690 |
| Number of pages | 4 |
| Publication status | Published - 2007 Aug 23 |
| Event | 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States Duration: 2007 May 20 → 2007 May 24 |
Publication series
| Name | 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings |
|---|---|
| Volume | 3 |
Conference
| Conference | 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 |
|---|---|
| Country | United States |
| City | Santa Clara, CA |
| Period | 07/5/20 → 07/5/24 |
Keywords
- AlGaN/GaN HEMT
- Current slump
- Deep level
- Device simulation
ASJC Scopus subject areas
- Mechanical Engineering
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Cite this
Horio, K. (2007). Simulation of buffer-related current slump in AlGaN/GaN HEMTs. In 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings (pp. 687-690). (2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings; Vol. 3).