TY - GEN
T1 - Simulation of buffer-related current slump in AlGaN/GaN HEMTs
AU - Horio, Kazushige
PY - 2007
Y1 - 2007
N2 - Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in AlGaN/GaN HEMTs, an acceptor density in a semi-insulating buffer layer should be made low.
AB - Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in AlGaN/GaN HEMTs, an acceptor density in a semi-insulating buffer layer should be made low.
KW - AlGaN/GaN HEMT
KW - Current slump
KW - Deep level
KW - Device simulation
UR - http://www.scopus.com/inward/record.url?scp=34547991208&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547991208&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:34547991208
SN - 1420063421
SN - 9781420063424
SN - 1420061844
SN - 9781420061840
T3 - 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
SP - 687
EP - 690
BT - 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
T2 - 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
Y2 - 20 May 2007 through 24 May 2007
ER -