Simulation of buffer-related current slump in AlGaN/GaN HEMTs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in AlGaN/GaN HEMTs, an acceptor density in a semi-insulating buffer layer should be made low.

Original languageEnglish
Title of host publication2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Pages687-690
Number of pages4
Publication statusPublished - 2007 Aug 23
Event2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
Duration: 2007 May 202007 May 24

Publication series

Name2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Volume3

Conference

Conference2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
CountryUnited States
CitySanta Clara, CA
Period07/5/2007/5/24

Keywords

  • AlGaN/GaN HEMT
  • Current slump
  • Deep level
  • Device simulation

ASJC Scopus subject areas

  • Mechanical Engineering

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  • Cite this

    Horio, K. (2007). Simulation of buffer-related current slump in AlGaN/GaN HEMTs. In 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings (pp. 687-690). (2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings; Vol. 3).