Abstract
Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer d are varied as parameters. It is shown that the drain lag and current slump are reduced by introducing a field plate longer than the length of surface-state region Ls, but they are not removed completely when d is thick. It is clearly shown that when d becomes very thin (≤ 0.02 μm), the lags and current slump are completely removed for LFP longer than Ls. By carefully examining the LFP dependence for d = 0.02 μm, it is found that they are completely removed even if LFP is comparable to Ls.
| Original language | English |
|---|---|
| Title of host publication | NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015 |
| Publisher | Taylor and Francis Inc. |
| Pages | 270-273 |
| Number of pages | 4 |
| Volume | 4 |
| ISBN (Electronic) | 9781498747301 |
| Publication status | Published - 2015 |
| Event | 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States Duration: 2015 Jun 14 → 2015 Jun 17 |
Other
| Other | 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference |
|---|---|
| Country | United States |
| City | Washington |
| Period | 15/6/14 → 15/6/17 |
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Keywords
- Current slump
- Drain lag
- GaAs FET
- Gate lag
- Surface state
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Fluid Flow and Transfer Processes
- Biotechnology
- Fuel Technology
Cite this
Simulation of current slump removal in field-plate GaAs MESFETs. / Nomoto, A.; Sato, Y.; Horio, Kazushige.
NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Vol. 4 Taylor and Francis Inc., 2015. p. 270-273.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Simulation of current slump removal in field-plate GaAs MESFETs
AU - Nomoto, A.
AU - Sato, Y.
AU - Horio, Kazushige
PY - 2015
Y1 - 2015
N2 - Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer d are varied as parameters. It is shown that the drain lag and current slump are reduced by introducing a field plate longer than the length of surface-state region Ls, but they are not removed completely when d is thick. It is clearly shown that when d becomes very thin (≤ 0.02 μm), the lags and current slump are completely removed for LFP longer than Ls. By carefully examining the LFP dependence for d = 0.02 μm, it is found that they are completely removed even if LFP is comparable to Ls.
AB - Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer d are varied as parameters. It is shown that the drain lag and current slump are reduced by introducing a field plate longer than the length of surface-state region Ls, but they are not removed completely when d is thick. It is clearly shown that when d becomes very thin (≤ 0.02 μm), the lags and current slump are completely removed for LFP longer than Ls. By carefully examining the LFP dependence for d = 0.02 μm, it is found that they are completely removed even if LFP is comparable to Ls.
KW - Current slump
KW - Drain lag
KW - GaAs FET
KW - Gate lag
KW - Surface state
UR - http://www.scopus.com/inward/record.url?scp=84983349629&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84983349629&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84983349629
VL - 4
SP - 270
EP - 273
BT - NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
PB - Taylor and Francis Inc.
ER -