Abstract
Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer d are varied as parameters. It is shown that the drain lag and current slump are reduced by introducing a field plate longer than the length of surface-state region Ls, but they are not removed completely when d is thick. It is clearly shown that when d becomes very thin (≤ 0.02 μm), the lags and current slump are completely removed for LFP longer than Ls. By carefully examining the LFP dependence for d = 0.02 μm, it is found that they are completely removed even if LFP is comparable to Ls.
| Original language | English |
|---|---|
| Title of host publication | NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015 |
| Publisher | Taylor and Francis Inc. |
| Pages | 270-273 |
| Number of pages | 4 |
| Volume | 4 |
| ISBN (Electronic) | 9781498747301 |
| Publication status | Published - 2015 |
| Event | 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States Duration: 2015 Jun 14 → 2015 Jun 17 |
Other
| Other | 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference |
|---|---|
| Country | United States |
| City | Washington |
| Period | 15/6/14 → 15/6/17 |
Keywords
- Current slump
- Drain lag
- GaAs FET
- Gate lag
- Surface state
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Fluid Flow and Transfer Processes
- Biotechnology
- Fuel Technology
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Nomoto, A., Sato, Y., & Horio, K. (2015). Simulation of current slump removal in field-plate GaAs MESFETs. In NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015 (Vol. 4, pp. 270-273). Taylor and Francis Inc..