Simulation of current slump removal in field-plate GaAs MESFETs

A. Nomoto, Y. Sato, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer d are varied as parameters. It is shown that the drain lag and current slump are reduced by introducing a field plate longer than the length of surface-state region Ls, but they are not removed completely when d is thick. It is clearly shown that when d becomes very thin (≤ 0.02 μm), the lags and current slump are completely removed for LFP longer than Ls. By carefully examining the LFP dependence for d = 0.02 μm, it is found that they are completely removed even if LFP is comparable to Ls.

Original languageEnglish
Title of host publicationNSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
PublisherTaylor and Francis Inc.
Pages270-273
Number of pages4
Volume4
ISBN (Electronic)9781498747301
Publication statusPublished - 2015
Event10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States
Duration: 2015 Jun 142015 Jun 17

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period15/6/1415/6/17

Fingerprint

Surface states
Passivation
Transient analysis
gallium arsenide

Keywords

  • Current slump
  • Drain lag
  • GaAs FET
  • Gate lag
  • Surface state

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Fuel Technology

Cite this

Nomoto, A., Sato, Y., & Horio, K. (2015). Simulation of current slump removal in field-plate GaAs MESFETs. In NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015 (Vol. 4, pp. 270-273). Taylor and Francis Inc..

Simulation of current slump removal in field-plate GaAs MESFETs. / Nomoto, A.; Sato, Y.; Horio, Kazushige.

NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Vol. 4 Taylor and Francis Inc., 2015. p. 270-273.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nomoto, A, Sato, Y & Horio, K 2015, Simulation of current slump removal in field-plate GaAs MESFETs. in NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. vol. 4, Taylor and Francis Inc., pp. 270-273, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference, Washington, United States, 15/6/14.
Nomoto A, Sato Y, Horio K. Simulation of current slump removal in field-plate GaAs MESFETs. In NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Vol. 4. Taylor and Francis Inc. 2015. p. 270-273
Nomoto, A. ; Sato, Y. ; Horio, Kazushige. / Simulation of current slump removal in field-plate GaAs MESFETs. NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Vol. 4 Taylor and Francis Inc., 2015. pp. 270-273
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