Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer

A. Nomoto, Y. Sato, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer Ti are varied as parameters. It is shown that the drain lag is not removed when Ti is thick even if LFP is longer than the length of surface-state region Ls. But when Ti becomes thinner than 0.02 μm, the drain lag, gate lag and current slump are completely removed by introducing a field plate longer than Ls because the surface-state effects may be masked. By carefully examining the LFP dependence of lags and current collapse for Ti = 0.02 μm, they are found to be completely removed even if LFP is alittle shorter than Ls.

Original languageEnglish
Title of host publicationAdvanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016
PublisherTechConnect
Pages117-120
Number of pages4
Volume4
ISBN (Electronic)9780997511734
Publication statusPublished - 2016
Event10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States
Duration: 2016 May 222016 May 25

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period16/5/2216/5/25

Fingerprint

Surface states
Passivation
Transient analysis
gallium arsenide

Keywords

  • Current slump
  • Drain lag
  • GaAs FET
  • Gate lag
  • Surface state

ASJC Scopus subject areas

  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Surfaces, Coatings and Films
  • Fuel Technology

Cite this

Nomoto, A., Sato, Y., & Horio, K. (2016). Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer. In Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016 (Vol. 4, pp. 117-120). TechConnect.

Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer. / Nomoto, A.; Sato, Y.; Horio, Kazushige.

Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. Vol. 4 TechConnect, 2016. p. 117-120.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nomoto, A, Sato, Y & Horio, K 2016, Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer. in Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. vol. 4, TechConnect, pp. 117-120, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference, Washington, United States, 16/5/22.
Nomoto A, Sato Y, Horio K. Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer. In Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. Vol. 4. TechConnect. 2016. p. 117-120
Nomoto, A. ; Sato, Y. ; Horio, Kazushige. / Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer. Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. Vol. 4 TechConnect, 2016. pp. 117-120
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