@inproceedings{7eeae37ae46b4b829a310b39702e54df,
title = "Simulation of decrease in lag phenomena and current slump of field-plate GaAs FETs",
abstract = "Two-dimensional simulation of GaAs MESFETs with a field plate is performed in which a deep donor {"}EL2{"} is considered in a semi-insulating substrate. It is studied how the existence of field plate affects substrate-related lag phenomena and current slump. It is shown that the drain lag and current slump could be reduced by introducing a field plate, because electron trapping in the substrate is weakened by it. Dependence of lag phenomena and current slump on the field-plate length and on the insulator thickness under the field plate is also studied. It is suggested that there are optimum values for the field-plate length and insulator thickness to reduce the current slump and also to maintain the high frequency performance of GaAs FETs.",
keywords = "Current slump, Drain lag, FET, GaAs, Trap",
author = "K. Itagaki and H. Ueda and Y. Terao and K. Horio",
year = "2009",
month = dec,
day = "1",
language = "English",
isbn = "9781439817834",
series = "Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009",
pages = "355--358",
booktitle = "Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009",
note = "Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 ; Conference date: 03-05-2009 Through 07-05-2009",
}