Simulation of decrease in lag phenomena and current slump of field-plate GaAs FETs

K. Itagaki, H. Ueda, Y. Terao, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional simulation of GaAs MESFETs with a field plate is performed in which a deep donor "EL2" is considered in a semi-insulating substrate. It is studied how the existence of field plate affects substrate-related lag phenomena and current slump. It is shown that the drain lag and current slump could be reduced by introducing a field plate, because electron trapping in the substrate is weakened by it. Dependence of lag phenomena and current slump on the field-plate length and on the insulator thickness under the field plate is also studied. It is suggested that there are optimum values for the field-plate length and insulator thickness to reduce the current slump and also to maintain the high frequency performance of GaAs FETs.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
Pages355-358
Number of pages4
Volume3
Publication statusPublished - 2009
EventNanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 - Houston, TX
Duration: 2009 May 32009 May 7

Other

OtherNanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
CityHouston, TX
Period09/5/309/5/7

Fingerprint

Field effect transistors
Substrates
Electrons
gallium arsenide

Keywords

  • Current slump
  • Drain lag
  • FET
  • GaAs
  • Trap

ASJC Scopus subject areas

  • Biotechnology
  • Biomedical Engineering
  • Biomaterials

Cite this

Itagaki, K., Ueda, H., Terao, Y., & Horio, K. (2009). Simulation of decrease in lag phenomena and current slump of field-plate GaAs FETs. In Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 (Vol. 3, pp. 355-358)

Simulation of decrease in lag phenomena and current slump of field-plate GaAs FETs. / Itagaki, K.; Ueda, H.; Terao, Y.; Horio, Kazushige.

Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009. Vol. 3 2009. p. 355-358.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Itagaki, K, Ueda, H, Terao, Y & Horio, K 2009, Simulation of decrease in lag phenomena and current slump of field-plate GaAs FETs. in Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009. vol. 3, pp. 355-358, Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009, Houston, TX, 09/5/3.
Itagaki K, Ueda H, Terao Y, Horio K. Simulation of decrease in lag phenomena and current slump of field-plate GaAs FETs. In Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009. Vol. 3. 2009. p. 355-358
Itagaki, K. ; Ueda, H. ; Terao, Y. ; Horio, Kazushige. / Simulation of decrease in lag phenomena and current slump of field-plate GaAs FETs. Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009. Vol. 3 2009. pp. 355-358
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