Simulation of decrease in lag phenomena and current slump of field-plate GaAs FETs

K. Itagaki, H. Ueda, Y. Terao, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional simulation of GaAs MESFETs with a field plate is performed in which a deep donor "EL2" is considered in a semi-insulating substrate. It is studied how the existence of field plate affects substrate-related lag phenomena and current slump. It is shown that the drain lag and current slump could be reduced by introducing a field plate, because electron trapping in the substrate is weakened by it. Dependence of lag phenomena and current slump on the field-plate length and on the insulator thickness under the field plate is also studied. It is suggested that there are optimum values for the field-plate length and insulator thickness to reduce the current slump and also to maintain the high frequency performance of GaAs FETs.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
Pages355-358
Number of pages4
Publication statusPublished - 2009 Dec 1
EventNanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 - Houston, TX, United States
Duration: 2009 May 32009 May 7

Publication series

NameTechnical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
Volume3

Conference

ConferenceNanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
CountryUnited States
CityHouston, TX
Period09/5/309/5/7

Keywords

  • Current slump
  • Drain lag
  • FET
  • GaAs
  • Trap

ASJC Scopus subject areas

  • Biotechnology
  • Biomedical Engineering
  • Biomaterials

Fingerprint Dive into the research topics of 'Simulation of decrease in lag phenomena and current slump of field-plate GaAs FETs'. Together they form a unique fingerprint.

  • Cite this

    Itagaki, K., Ueda, H., Terao, Y., & Horio, K. (2009). Simulation of decrease in lag phenomena and current slump of field-plate GaAs FETs. In Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 (pp. 355-358). (Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009; Vol. 3).