Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs

A. Wakabayashi, Y. Kazami, J. Ozawa, Y. Mitani, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The kink (or an abnormal increase in output conductance with the drain voltage) in GaAs FETs can occur due to a space-charge effect originated from generated hole capturing by surface states around the gate. Here, device-structure dependence of kink phenomena in GaAs MESFETs is studied particularly by simulating structures that are intended to reduce the surface-state effects at the source side, such as a recessed-gate structure and a structure with n+-source region.

Original languageEnglish
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages8-11
Number of pages4
Publication statusPublished - 2003 Dec 1
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: 2003 Feb 232003 Feb 27

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume2

Conference

Conference2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CountryUnited States
CitySan Francisco, CA
Period03/2/2303/2/27

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Keywords

  • GaAs MESFET
  • Impact ionization
  • Kink
  • Recessed-gate structure
  • Surface state

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wakabayashi, A., Kazami, Y., Ozawa, J., Mitani, Y., & Horio, K. (2003). Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs. In M. Laudon, & B. Romanowicz (Eds.), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 (pp. 8-11). (2003 Nanotechnology Conference and Trade Show - Nanotech 2003; Vol. 2).