Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs

A. Wakabayashi, Y. Kazami, J. Ozawa, Y. Mitani, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The kink (or an abnormal increase in output conductance with the drain voltage) in GaAs FETs can occur due to a space-charge effect originated from generated hole capturing by surface states around the gate. Here, device-structure dependence of kink phenomena in GaAs MESFETs is studied particularly by simulating structures that are intended to reduce the surface-state effects at the source side, such as a recessed-gate structure and a structure with n+-source region.

Original languageEnglish
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages8-11
Number of pages4
Volume2
Publication statusPublished - 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA
Duration: 2003 Feb 232003 Feb 27

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CitySan Francisco, CA
Period03/2/2303/2/27

Fingerprint

Surface states
Field effect transistors
Electric space charge
Electric potential

Keywords

  • GaAs MESFET
  • Impact ionization
  • Kink
  • Recessed-gate structure
  • Surface state

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wakabayashi, A., Kazami, Y., Ozawa, J., Mitani, Y., & Horio, K. (2003). Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs. In M. Laudon, & B. Romanowicz (Eds.), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 (Vol. 2, pp. 8-11)

Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs. / Wakabayashi, A.; Kazami, Y.; Ozawa, J.; Mitani, Y.; Horio, Kazushige.

2003 Nanotechnology Conference and Trade Show - Nanotech 2003. ed. / M. Laudon; B. Romanowicz. Vol. 2 2003. p. 8-11.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wakabayashi, A, Kazami, Y, Ozawa, J, Mitani, Y & Horio, K 2003, Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs. in M Laudon & B Romanowicz (eds), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. vol. 2, pp. 8-11, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, San Francisco, CA, 03/2/23.
Wakabayashi A, Kazami Y, Ozawa J, Mitani Y, Horio K. Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs. In Laudon M, Romanowicz B, editors, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. Vol. 2. 2003. p. 8-11
Wakabayashi, A. ; Kazami, Y. ; Ozawa, J. ; Mitani, Y. ; Horio, Kazushige. / Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs. 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. editor / M. Laudon ; B. Romanowicz. Vol. 2 2003. pp. 8-11
@inproceedings{d4e666aa4ac540088583b3cb16f0f151,
title = "Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs",
abstract = "The kink (or an abnormal increase in output conductance with the drain voltage) in GaAs FETs can occur due to a space-charge effect originated from generated hole capturing by surface states around the gate. Here, device-structure dependence of kink phenomena in GaAs MESFETs is studied particularly by simulating structures that are intended to reduce the surface-state effects at the source side, such as a recessed-gate structure and a structure with n+-source region.",
keywords = "GaAs MESFET, Impact ionization, Kink, Recessed-gate structure, Surface state",
author = "A. Wakabayashi and Y. Kazami and J. Ozawa and Y. Mitani and Kazushige Horio",
year = "2003",
language = "English",
isbn = "0972842209",
volume = "2",
pages = "8--11",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",

}

TY - GEN

T1 - Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs

AU - Wakabayashi, A.

AU - Kazami, Y.

AU - Ozawa, J.

AU - Mitani, Y.

AU - Horio, Kazushige

PY - 2003

Y1 - 2003

N2 - The kink (or an abnormal increase in output conductance with the drain voltage) in GaAs FETs can occur due to a space-charge effect originated from generated hole capturing by surface states around the gate. Here, device-structure dependence of kink phenomena in GaAs MESFETs is studied particularly by simulating structures that are intended to reduce the surface-state effects at the source side, such as a recessed-gate structure and a structure with n+-source region.

AB - The kink (or an abnormal increase in output conductance with the drain voltage) in GaAs FETs can occur due to a space-charge effect originated from generated hole capturing by surface states around the gate. Here, device-structure dependence of kink phenomena in GaAs MESFETs is studied particularly by simulating structures that are intended to reduce the surface-state effects at the source side, such as a recessed-gate structure and a structure with n+-source region.

KW - GaAs MESFET

KW - Impact ionization

KW - Kink

KW - Recessed-gate structure

KW - Surface state

UR - http://www.scopus.com/inward/record.url?scp=6344228198&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344228198&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0972842209

VL - 2

SP - 8

EP - 11

BT - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

A2 - Laudon, M.

A2 - Romanowicz, B.

ER -