Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing

Kazushige Horio, Y. Mitani, A. Wakabayashi, N. Kurosawa

Research output: Contribution to journalArticle

Abstract

Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abruptly. The gate-lag or slow current transient becomes more pronounced when the off-state gate voltage is more negative, because the surface-state effects or substrate-trap effects become more significant. Changes of I-V curves of GaAs MESFETs, when the drain voltage is swept with different speeds, are also simulated. When the swept time is short, the curve shows overshoot-like behavior and the kink disappears, indicating that the I-V characteristics should be quite different between DC and RF conditions.

Original languageEnglish
Pages (from-to)245-249
Number of pages5
JournalVLSI Design
Volume13
Issue number1-4
Publication statusPublished - 2001

Fingerprint

Field effect transistors
Electric potential
Surface states
High electron mobility transistors
Substrates

Keywords

  • Drain-lag
  • GaAs MESFET
  • Gate-lag
  • HEMT
  • Kink phenomena
  • Trap

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

Cite this

Horio, K., Mitani, Y., Wakabayashi, A., & Kurosawa, N. (2001). Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing. VLSI Design, 13(1-4), 245-249.

Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing. / Horio, Kazushige; Mitani, Y.; Wakabayashi, A.; Kurosawa, N.

In: VLSI Design, Vol. 13, No. 1-4, 2001, p. 245-249.

Research output: Contribution to journalArticle

Horio, K, Mitani, Y, Wakabayashi, A & Kurosawa, N 2001, 'Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing', VLSI Design, vol. 13, no. 1-4, pp. 245-249.
Horio K, Mitani Y, Wakabayashi A, Kurosawa N. Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing. VLSI Design. 2001;13(1-4):245-249.
Horio, Kazushige ; Mitani, Y. ; Wakabayashi, A. ; Kurosawa, N. / Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing. In: VLSI Design. 2001 ; Vol. 13, No. 1-4. pp. 245-249.
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