Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing

K. Horio, Y. Mitani, A. Wakabayashi, N. Kurosawa

Research output: Contribution to journalArticle

Abstract

Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abruptly. The gate-lag or slow current transient becomes more pronounced when the off-state gate voltage is more negative, because the surface-state effects or substrate-trap effects become more significant. Changes of I-V curves of GaAs MESFETs, when the drain voltage is swept with different speeds, are also simulated. When the swept time is short, the curve shows overshoot-like behavior and the kink disappears, indicating that the I-V characteristics should be quite different between DC and RF conditions.

Original languageEnglish
Pages (from-to)245-249
Number of pages5
JournalVLSI Design
Volume13
Issue number1-4
DOIs
Publication statusPublished - 2001 Jan 1

Keywords

  • Drain-lag
  • GaAs MESFET
  • Gate-lag
  • HEMT
  • Kink phenomena
  • Trap

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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