Simulation of field-plate effects on lag and current collapse in GaN-based FETs

K. Itagaki, A. Nakajima, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

2-D transient simulations of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a buffer layer. It is studied how the existence of field plate affects bufferrelated lag phenomena and current collapse. It is shown that in both FETs, the drain lag and current collapse could be reduced by introducing a field plate, because electron trapping in the buffer layer is weakened by it. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
Pages533-536
Number of pages4
Publication statusPublished - 2008 Oct 1
Event2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008 - Quebec City, QC, United States
Duration: 2008 Jun 12008 Jun 5

Publication series

NameTechnical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
Volume3

Conference

Conference2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008
CountryUnited States
CityQuebec City, QC
Period08/6/108/6/5

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Keywords

  • Current collapse
  • Drain lag
  • FET
  • GaN
  • Trap

ASJC Scopus subject areas

  • Mechanical Engineering

Cite this

Itagaki, K., Nakajima, A., & Horio, K. (2008). Simulation of field-plate effects on lag and current collapse in GaN-based FETs. In Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008 (pp. 533-536). (Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008; Vol. 3).