@inproceedings{4c12b23fbd574e7aadecc69e2b175eff,
title = "Simulation of field-plate effects on lag and current collapse in GaN-based FETs",
abstract = "2-D transient simulations of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a buffer layer. It is studied how the existence of field plate affects bufferrelated lag phenomena and current collapse. It is shown that in both FETs, the drain lag and current collapse could be reduced by introducing a field plate, because electron trapping in the buffer layer is weakened by it. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse.",
keywords = "Current collapse, Drain lag, FET, GaN, Trap",
author = "K. Itagaki and A. Nakajima and K. Horio",
year = "2008",
language = "English",
isbn = "9781420085075",
series = "Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008",
pages = "533--536",
booktitle = "Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008",
note = "2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008 ; Conference date: 01-06-2008 Through 05-06-2008",
}