@inproceedings{6bff71c5f5a544939c3856d37ff0af55,

title = "Simulation of field-plate effects on surface-state-related lag and current slump in GaAs FETs",

abstract = "Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field-plate length and SiO2 passivation layer thickness is also studied, suggesting that there are adequate values of field-plate length and SiO2 layer thickness to reduce current slump and also to maintain high-frequency performance of GaAs FETs.",

keywords = "Current slump, Drain lag, GaAs FET, Gate lag, Surface state",

author = "T. Tanaka and K. Itagaki and A. Nakajima and K. Horio",

year = "2011",

language = "English",

isbn = "9781439871393",

series = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",

pages = "595--598",

booktitle = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",

note = "Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 ; Conference date: 13-06-2011 Through 16-06-2011",

}