Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

H. Hanawa, Y. Satoh, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional analysis of breakdown characteristics in AlGaN/GaN HEMTs is performed as parameters of relative permittivity of the passivation layer ϵr and its thickness d. It is shown that as ϵr increases, the off-state breakdown voltage Vbr increases, because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. It is also shown that Vbr increases as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.

Original languageEnglish
Title of host publicationNSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
PublisherTaylor and Francis Inc.
Pages266-269
Number of pages4
Volume4
ISBN (Electronic)9781498747301
Publication statusPublished - 2015
Event10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States
Duration: 2015 Jun 142015 Jun 17

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period15/6/1415/6/17

Fingerprint

High electron mobility transistors
Electric breakdown
Passivation
Leakage currents
Buffers
Permittivity
Electric fields
aluminum gallium nitride

Keywords

  • Breakdown voltage
  • GaN
  • HEMT
  • High-k passivation layer
  • Two-dimensional analysis

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Fuel Technology

Cite this

Hanawa, H., Satoh, Y., & Horio, K. (2015). Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs. In NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015 (Vol. 4, pp. 266-269). Taylor and Francis Inc..

Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs. / Hanawa, H.; Satoh, Y.; Horio, Kazushige.

NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Vol. 4 Taylor and Francis Inc., 2015. p. 266-269.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hanawa, H, Satoh, Y & Horio, K 2015, Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs. in NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. vol. 4, Taylor and Francis Inc., pp. 266-269, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference, Washington, United States, 15/6/14.
Hanawa H, Satoh Y, Horio K. Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs. In NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Vol. 4. Taylor and Francis Inc. 2015. p. 266-269
Hanawa, H. ; Satoh, Y. ; Horio, Kazushige. / Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs. NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Vol. 4 Taylor and Francis Inc., 2015. pp. 266-269
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