Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

Kazushige Horio, K. śatoh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A numerical simulation of GaAs MESFETs with semi-insulating substrates impurity-compensated to deep levels is carried out by considering the impact ionization of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (`kink') arises because holes that are generated by impact ionization flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.

Original languageEnglish
Pages (from-to)1128-1130
Number of pages3
JournalElectronics Letters
Volume29
Issue number12
Publication statusPublished - 1993 Jan 1

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Impact ionization
Hole traps
Charge distribution
Substrates
Electric space charge
Impurities
Computer simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate. / Horio, Kazushige; śatoh, K.

In: Electronics Letters, Vol. 29, No. 12, 01.01.1993, p. 1128-1130.

Research output: Contribution to journalArticle

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