Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

K. Horio; K. śatoh

doi:10.1049/el:19930753

Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

K. Horio, K. śatoh

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A numerical simulation of GaAs MESFETs with semiinsulating substrates impurity-compensated to deep levels is carried out by considering the impact ionisation of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (‘kink’) arises because holes that are generated by impact ionisation flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.

Original language	English
Pages (from-to)	1128-1130
Number of pages	3
Journal	Electronics Letters
Volume	29
Issue number	12
DOIs	https://doi.org/10.1049/el:19930753
Publication status	Published - 1993 Jun

Keywords

Field-effect transistors
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19930753

Cite this

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title = "Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate",

abstract = "A numerical simulation of GaAs MESFETs with semiinsulating substrates impurity-compensated to deep levels is carried out by considering the impact ionisation of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance ({\textquoteleft}kink{\textquoteright}) arises because holes that are generated by impact ionisation flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.",

keywords = "Field-effect transistors, Semiconductor devices and materials",

author = "K. Horio and K. {\'s}atoh",

year = "1993",

month = jun,

doi = "10.1049/el:19930753",

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journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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AU - Horio, K.

AU - śatoh, K.

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N2 - A numerical simulation of GaAs MESFETs with semiinsulating substrates impurity-compensated to deep levels is carried out by considering the impact ionisation of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (‘kink’) arises because holes that are generated by impact ionisation flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.

AB - A numerical simulation of GaAs MESFETs with semiinsulating substrates impurity-compensated to deep levels is carried out by considering the impact ionisation of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (‘kink’) arises because holes that are generated by impact ionisation flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.

KW - Field-effect transistors

KW - Semiconductor devices and materials

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DO - 10.1049/el:19930753

M3 - Article

AN - SCOPUS:0027612583

SN - 0013-5194

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EP - 1130

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

Abstract

Keywords

ASJC Scopus subject areas

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