A numerical simulation of GaAs MESFETs with semiinsulating substrates impurity-compensated to deep levels is carried out by considering the impact ionisation of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (‘kink’) arises because holes that are generated by impact ionisation flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.
|Number of pages||3|
|Publication status||Published - 1993 Jun|
- Field-effect transistors
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering