A numerical simulation of GaAs MESFETs with semi-insulating substrates impurity-compensated to deep levels is carried out by considering the impact ionization of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (`kink') arises because holes that are generated by impact ionization flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.
|Number of pages||3|
|Publication status||Published - 1993 Jan 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering