Simulation of lag and current slump in AlGaN/GaN HEMTs as affected by buffer trapping

A. Nakajima, K. Itagaki, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that lag phenomena and current slump could be reproduced. Particularly, it is shown that gate lag is correlated with relatively high source access resistance of AlGaN/GaN HEMTs, and that drain lag could be a major cause of current slump. The current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is concluded that an acceptor density in the buffer layer should be made low to minimize current slump, although current cutoff behavior may be degraded when the gate length is short.

Original languageEnglish
Title of host publication2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
PublisherSpringer-Verlag Wien
Pages265-268
Number of pages4
Publication statusPublished - 2007
Event12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna
Duration: 2007 Sep 252007 Sep 27

Other

Other12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
CityVienna
Period07/9/2507/9/27

Fingerprint

High electron mobility transistors
Buffer layers
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Modelling and Simulation

Cite this

Nakajima, A., Itagaki, K., & Horio, K. (2007). Simulation of lag and current slump in AlGaN/GaN HEMTs as affected by buffer trapping. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 265-268). Springer-Verlag Wien.

Simulation of lag and current slump in AlGaN/GaN HEMTs as affected by buffer trapping. / Nakajima, A.; Itagaki, K.; Horio, Kazushige.

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007. Springer-Verlag Wien, 2007. p. 265-268.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakajima, A, Itagaki, K & Horio, K 2007, Simulation of lag and current slump in AlGaN/GaN HEMTs as affected by buffer trapping. in 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007. Springer-Verlag Wien, pp. 265-268, 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, Vienna, 07/9/25.
Nakajima A, Itagaki K, Horio K. Simulation of lag and current slump in AlGaN/GaN HEMTs as affected by buffer trapping. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007. Springer-Verlag Wien. 2007. p. 265-268
Nakajima, A. ; Itagaki, K. ; Horio, Kazushige. / Simulation of lag and current slump in AlGaN/GaN HEMTs as affected by buffer trapping. 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007. Springer-Verlag Wien, 2007. pp. 265-268
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