Simulation of lag phenomena and pulsed I-V curves of compound semiconductor FETs as affected by impact ionization

Y. Kazami, D. Kasai, Y. Mitani, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)203-206
JournalJournal of Computational Electronics
VolumeVol.2
Publication statusPublished - 2003 Dec 1

Cite this

Simulation of lag phenomena and pulsed I-V curves of compound semiconductor FETs as affected by impact ionization. / Kazami, Y.; Kasai, D.; Mitani, Y.; Horio, K.

In: Journal of Computational Electronics, Vol. Vol.2, 01.12.2003, p. 203-206.

Research output: Contribution to journalArticle

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journal = "Journal of Computational Electronics",
issn = "1569-8025",
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AU - Kazami, Y.

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AU - Horio, K.

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