Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers

R. Tsurumaki, N. Noda, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on the fieldplate length and the insulator thickness under the field plate is also studied, showing that the rates of lags and current collapse are quantitatively similar between the two cases with different types of buffer layers when the deep-acceptor density in the buffer layer is the same.

Original languageEnglish
Title of host publicationAdvanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016
PublisherTechConnect
Pages121-124
Number of pages4
Volume4
ISBN (Electronic)9780997511734
Publication statusPublished - 2016
Event10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States
Duration: 2016 May 222016 May 25

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period16/5/2216/5/25

Fingerprint

High electron mobility transistors
Buffer layers
aluminum gallium nitride
Electrons

Keywords

  • Current collapse
  • Deep acceptor
  • Field plate
  • GaN
  • HEMT

ASJC Scopus subject areas

  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Surfaces, Coatings and Films
  • Fuel Technology

Cite this

Tsurumaki, R., Noda, N., & Horio, K. (2016). Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers. In Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016 (Vol. 4, pp. 121-124). TechConnect.

Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers. / Tsurumaki, R.; Noda, N.; Horio, Kazushige.

Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. Vol. 4 TechConnect, 2016. p. 121-124.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsurumaki, R, Noda, N & Horio, K 2016, Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers. in Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. vol. 4, TechConnect, pp. 121-124, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference, Washington, United States, 16/5/22.
Tsurumaki R, Noda N, Horio K. Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers. In Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. Vol. 4. TechConnect. 2016. p. 121-124
Tsurumaki, R. ; Noda, N. ; Horio, Kazushige. / Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers. Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. Vol. 4 TechConnect, 2016. pp. 121-124
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