Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on insulator thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse of AlGaN/GaN HEMTs.

Original languageEnglish
Title of host publicationNSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
PublisherTaylor and Francis Inc.
Pages274-277
Number of pages4
Volume4
ISBN (Electronic)9781498747301
Publication statusPublished - 2015
Event10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States
Duration: 2015 Jun 142015 Jun 17

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period15/6/1415/6/17

Fingerprint

High electron mobility transistors
Buffer layers
Electrons
aluminum gallium nitride

Keywords

  • Current collapse
  • Deep acceptor
  • Field plate
  • GaN
  • HEMT

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Fuel Technology

Cite this

Noda, N., & Horio, K. (2015). Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer. In NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015 (Vol. 4, pp. 274-277). Taylor and Francis Inc..

Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer. / Noda, N.; Horio, Kazushige.

NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Vol. 4 Taylor and Francis Inc., 2015. p. 274-277.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Noda, N & Horio, K 2015, Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer. in NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. vol. 4, Taylor and Francis Inc., pp. 274-277, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference, Washington, United States, 15/6/14.
Noda N, Horio K. Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer. In NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Vol. 4. Taylor and Francis Inc. 2015. p. 274-277
Noda, N. ; Horio, Kazushige. / Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer. NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Vol. 4 Taylor and Francis Inc., 2015. pp. 274-277
@inproceedings{aacc4b7bc2bd46af88357099d83eee6b,
title = "Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer",
abstract = "We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on insulator thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse of AlGaN/GaN HEMTs.",
keywords = "Current collapse, Deep acceptor, Field plate, GaN, HEMT",
author = "N. Noda and Kazushige Horio",
year = "2015",
language = "English",
volume = "4",
pages = "274--277",
booktitle = "NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015",
publisher = "Taylor and Francis Inc.",

}

TY - GEN

T1 - Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer

AU - Noda, N.

AU - Horio, Kazushige

PY - 2015

Y1 - 2015

N2 - We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on insulator thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse of AlGaN/GaN HEMTs.

AB - We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on insulator thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse of AlGaN/GaN HEMTs.

KW - Current collapse

KW - Deep acceptor

KW - Field plate

KW - GaN

KW - HEMT

UR - http://www.scopus.com/inward/record.url?scp=84983339222&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84983339222&partnerID=8YFLogxK

M3 - Conference contribution

VL - 4

SP - 274

EP - 277

BT - NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015

PB - Taylor and Francis Inc.

ER -