| Original language | English |
|---|---|
| Pages (from-to) | 116-119 |
| Journal | Proceedings of 2004 International Symposium of Signals, Systems and Electronics, Linz, Austria |
| Publication status | Published - 2004 Aug 1 |
Cite this
Horio, K., Kazami, Y., & Kasai, D. (2004). Simulation of power compression in GaAs and GaN MESFETs. Proceedings of 2004 International Symposium of Signals, Systems and Electronics, Linz, Austria, 116-119.
Simulation of power compression in GaAs and GaN MESFETs. / Horio, K.; Kazami, Y.; Kasai, D.
In: Proceedings of 2004 International Symposium of Signals, Systems and Electronics, Linz, Austria, 01.08.2004, p. 116-119.Research output: Contribution to journal › Article
Horio, K, Kazami, Y & Kasai, D 2004, 'Simulation of power compression in GaAs and GaN MESFETs', Proceedings of 2004 International Symposium of Signals, Systems and Electronics, Linz, Austria, pp. 116-119.
Horio K, Kazami Y, Kasai D. Simulation of power compression in GaAs and GaN MESFETs. Proceedings of 2004 International Symposium of Signals, Systems and Electronics, Linz, Austria. 2004 Aug 1;116-119.
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language = "English",
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T1 - Simulation of power compression in GaAs and GaN MESFETs
AU - Horio, K.
AU - Kazami, Y.
AU - Kasai, D.
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M3 - Article
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EP - 119
JO - Proceedings of 2004 International Symposium of Signals, Systems and Electronics, Linz, Austria
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