Simulation of power compression in GaAs and GaN MESFETs

K. Horio, Y. Kazami, D. Kasai

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	116-119
Journal	Proceedings of 2004 International Symposium of Signals, Systems and Electronics, Linz, Austria
Publication status	Published - 2004 Aug 1

Cite this

@article{2ac5dec0cabb49de98afdb55ca27ed5b,

title = "Simulation of power compression in GaAs and GaN MESFETs",

author = "K. Horio and Y. Kazami and D. Kasai",

year = "2004",

month = aug,

day = "1",

language = "English",

pages = "116--119",

journal = "Proceedings of 2004 International Symposium of Signals, Systems and Electronics, Linz, Austria",

}

TY - JOUR

T1 - Simulation of power compression in GaAs and GaN MESFETs

AU - Horio, K.

AU - Kazami, Y.

AU - Kasai, D.

PY - 2004/8/1

Y1 - 2004/8/1

M3 - Article

SP - 116

EP - 119

JO - Proceedings of 2004 International Symposium of Signals, Systems and Electronics, Linz, Austria

JF - Proceedings of 2004 International Symposium of Signals, Systems and Electronics, Linz, Austria

ER -