Simulation of recess-structure dependence of gate-lag phenomena in GaAs MESFETs

Kazushige Horio, Y. Mitani, A. Wakabayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have made two-dimensional simulation of turn-on characteristics of recessed-gate and buried-gate GaAs MESFETs, and studied how the gate-lag or the slow current transient (which may occur due to surface states) is affected by the recess-structural parameters and the off-state gate voltage V Goff. It is shown that when VGoff is around the threshold voltage (pinch-off voltage) Vth, the gate-lag could be greatly reduced by introducing the buried-gate structure. However, it is suggested that large gate-lag might be seen when VGoff is much more negative than Vth.

Original languageEnglish
Title of host publication2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001
EditorsM. Laudon, B. Romanowicz
Pages510-513
Number of pages4
Publication statusPublished - 2001
Event2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 - Hilton Head Island, SC
Duration: 2001 Mar 192001 Mar 21

Other

Other2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001
CityHilton Head Island, SC
Period01/3/1901/3/21

Fingerprint

Surface states
Electric potential
Threshold voltage

Keywords

  • Buried gate
  • GaAs MESFET
  • Gate lag
  • Recessed gate
  • Surface state

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Horio, K., Mitani, Y., & Wakabayashi, A. (2001). Simulation of recess-structure dependence of gate-lag phenomena in GaAs MESFETs. In M. Laudon, & B. Romanowicz (Eds.), 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 (pp. 510-513)

Simulation of recess-structure dependence of gate-lag phenomena in GaAs MESFETs. / Horio, Kazushige; Mitani, Y.; Wakabayashi, A.

2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001. ed. / M. Laudon; B. Romanowicz. 2001. p. 510-513.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horio, K, Mitani, Y & Wakabayashi, A 2001, Simulation of recess-structure dependence of gate-lag phenomena in GaAs MESFETs. in M Laudon & B Romanowicz (eds), 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001. pp. 510-513, 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001, Hilton Head Island, SC, 01/3/19.
Horio K, Mitani Y, Wakabayashi A. Simulation of recess-structure dependence of gate-lag phenomena in GaAs MESFETs. In Laudon M, Romanowicz B, editors, 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001. 2001. p. 510-513
Horio, Kazushige ; Mitani, Y. ; Wakabayashi, A. / Simulation of recess-structure dependence of gate-lag phenomena in GaAs MESFETs. 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001. editor / M. Laudon ; B. Romanowicz. 2001. pp. 510-513
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