Simulation of removal of surface-state-related lag and current slump in GaAs FETs

H. Hafiz, M. Kumeno, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of lag phenomena and current slump on field-plate length and SiO 2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages582-585
Number of pages4
Publication statusPublished - 2012
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA
Duration: 2012 Jun 182012 Jun 21

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CitySanta Clara, CA
Period12/6/1812/6/21

Fingerprint

Surface states
Field effect transistors
Passivation
Transient analysis
Electric potential
gallium arsenide

Keywords

  • Current slump
  • Drain lag
  • GaAs FET
  • Gate lag
  • Surface state

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

Cite this

Hafiz, H., Kumeno, M., & Horio, K. (2012). Simulation of removal of surface-state-related lag and current slump in GaAs FETs. In Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 (pp. 582-585)

Simulation of removal of surface-state-related lag and current slump in GaAs FETs. / Hafiz, H.; Kumeno, M.; Horio, Kazushige.

Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. p. 582-585.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hafiz, H, Kumeno, M & Horio, K 2012, Simulation of removal of surface-state-related lag and current slump in GaAs FETs. in Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. pp. 582-585, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, Santa Clara, CA, 12/6/18.
Hafiz H, Kumeno M, Horio K. Simulation of removal of surface-state-related lag and current slump in GaAs FETs. In Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. p. 582-585
Hafiz, H. ; Kumeno, M. ; Horio, Kazushige. / Simulation of removal of surface-state-related lag and current slump in GaAs FETs. Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. pp. 582-585
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