Simulation of removal of surface-state-related lag and current slump in GaAs FETs

H. Hafiz, M. Kumeno, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of lag phenomena and current slump on field-plate length and SiO 2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.

Original languageEnglish
Title of host publicationNanotechnology 2012
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages582-585
Number of pages4
Publication statusPublished - 2012 Aug 17
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: 2012 Jun 182012 Jun 21

Publication series

NameTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Conference

ConferenceNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period12/6/1812/6/21

Keywords

  • Current slump
  • Drain lag
  • GaAs FET
  • Gate lag
  • Surface state

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Simulation of removal of surface-state-related lag and current slump in GaAs FETs'. Together they form a unique fingerprint.

  • Cite this

    Hafiz, H., Kumeno, M., & Horio, K. (2012). Simulation of removal of surface-state-related lag and current slump in GaAs FETs. In Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 (pp. 582-585). (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).