| Original language | English |
|---|---|
| Pages (from-to) | 223-227 |
| Journal | J. Comp. Electron |
| Volume | Vol.5 |
| Publication status | Published - 2006 Jun 1 |
Cite this
Takayanagi, H., Nakano, H., Yonemoto, K., & Horio, K. (2006). Simulation of slow current transients and current collapse in GaN FETs. J. Comp. Electron, Vol.5, 223-227.
Simulation of slow current transients and current collapse in GaN FETs. / Takayanagi, H.; Nakano, H.; Yonemoto, K.; Horio, K.
In: J. Comp. Electron, Vol. Vol.5, 01.06.2006, p. 223-227.Research output: Contribution to journal › Article
Takayanagi, H, Nakano, H, Yonemoto, K & Horio, K 2006, 'Simulation of slow current transients and current collapse in GaN FETs', J. Comp. Electron, vol. Vol.5, pp. 223-227.
Takayanagi H, Nakano H, Yonemoto K, Horio K. Simulation of slow current transients and current collapse in GaN FETs. J. Comp. Electron. 2006 Jun 1;Vol.5:223-227.
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author = "H. Takayanagi and H. Nakano and K. Yonemoto and K. Horio",
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T1 - Simulation of slow current transients and current collapse in GaN FETs
AU - Takayanagi, H.
AU - Nakano, H.
AU - Yonemoto, K.
AU - Horio, K.
PY - 2006/6/1
Y1 - 2006/6/1
M3 - Article
VL - Vol.5
SP - 223
EP - 227
JO - J. Comp. Electron
JF - J. Comp. Electron
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