Simulation of slow current transients and current collapse in GaN FETs

H. Takayanagi, H. Nakano, K. Yonemoto, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)223-227
JournalJ. Comp. Electron
VolumeVol.5
Publication statusPublished - 2006 Jun 1

Cite this

Takayanagi, H., Nakano, H., Yonemoto, K., & Horio, K. (2006). Simulation of slow current transients and current collapse in GaN FETs. J. Comp. Electron, Vol.5, 223-227.

Simulation of slow current transients and current collapse in GaN FETs. / Takayanagi, H.; Nakano, H.; Yonemoto, K.; Horio, K.

In: J. Comp. Electron, Vol. Vol.5, 01.06.2006, p. 223-227.

Research output: Contribution to journalArticle

Takayanagi, H, Nakano, H, Yonemoto, K & Horio, K 2006, 'Simulation of slow current transients and current collapse in GaN FETs', J. Comp. Electron, vol. Vol.5, pp. 223-227.
Takayanagi H, Nakano H, Yonemoto K, Horio K. Simulation of slow current transients and current collapse in GaN FETs. J. Comp. Electron. 2006 Jun 1;Vol.5:223-227.
Takayanagi, H. ; Nakano, H. ; Yonemoto, K. ; Horio, K. / Simulation of slow current transients and current collapse in GaN FETs. In: J. Comp. Electron. 2006 ; Vol. Vol.5. pp. 223-227.
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