Simulations of Trapping Effects in GaAs MESFETs and Requirements for Substrates in GaAs MESFET-ICs

K. Horio, Y. Fuseya

Research output: Contribution to journalArticle

59 Citations (Scopus)
Original languageEnglish
Pages (from-to)241-244
JournalProceedings of 1992 IEEE GaAs IC Symposium, Florida, USA
Publication statusPublished - 1992 Oct 1

Cite this

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title = "Simulations of Trapping Effects in GaAs MESFETs and Requirements for Substrates in GaAs MESFET-ICs",
author = "K. Horio and Y. Fuseya",
year = "1992",
month = "10",
day = "1",
language = "English",
pages = "241--244",
journal = "Proceedings of 1992 IEEE GaAs IC Symposium, Florida, USA",

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T1 - Simulations of Trapping Effects in GaAs MESFETs and Requirements for Substrates in GaAs MESFET-ICs

AU - Horio, K.

AU - Fuseya, Y.

PY - 1992/10/1

Y1 - 1992/10/1

M3 - Article

SP - 241

EP - 244

JO - Proceedings of 1992 IEEE GaAs IC Symposium, Florida, USA

JF - Proceedings of 1992 IEEE GaAs IC Symposium, Florida, USA

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