Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs

Kazushige Horio, Yasuji Fuseya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 sec. The currents become constant temporarily at around t = 10-11 sec, but begin to decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels in the substrate. Effects of introducing a p-buffer layer on drain-current drifts and small-signal parameters are also studied. It is concluded that the use of a low trap-density substrate combined with introducing a p-buffer layer is effective to utilize high-speed and high-frequency performances of GaAs MESFETs.

Original languageEnglish
Title of host publicationGaAs IC Symposium Technical Digest 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages241-244
Number of pages4
ISBN (Electronic)0780307739, 9780780307735
DOIs
Publication statusPublished - 1992 Jan 1
Event14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992 - Miami Beach, United States
Duration: 1997 Oct 41997 Oct 7

Publication series

NameGaAs IC Symposium Technical Digest 1992

Conference

Conference14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992
CountryUnited States
CityMiami Beach
Period97/10/497/10/7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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    Horio, K., & Fuseya, Y. (1992). Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs. In GaAs IC Symposium Technical Digest 1992 (pp. 241-244). [247266] (GaAs IC Symposium Technical Digest 1992). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GAAS.1992.247266