Abstract
Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 sec. The currents become constant temporarily at around t = 10-11 sec, but begin to decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels in the substrate. Effects of introducing a p-buffer layer on drain-current drifts and small-signal parameters are also studied. It is concluded that the use of a low trap-density substrate combined with introducing a p-buffer layer is effective to utilize high-speed and high-frequency performances of GaAs MESFETs.
| Original language | English |
|---|---|
| Title of host publication | GaAs IC Symposium Technical Digest 1992 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 241-244 |
| Number of pages | 4 |
| ISBN (Electronic) | 0780307739, 9780780307735 |
| DOIs | |
| Publication status | Published - 1992 Jan 1 |
| Event | 14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992 - Miami Beach, United States Duration: 1997 Oct 4 → 1997 Oct 7 |
Publication series
| Name | GaAs IC Symposium Technical Digest 1992 |
|---|
Conference
| Conference | 14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992 |
|---|---|
| Country | United States |
| City | Miami Beach |
| Period | 97/10/4 → 97/10/7 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation
Cite this
Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs. / Horio, Kazushige; Fuseya, Yasuji.
GaAs IC Symposium Technical Digest 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 241-244 247266 (GaAs IC Symposium Technical Digest 1992).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs
AU - Horio, Kazushige
AU - Fuseya, Yasuji
PY - 1992/1/1
Y1 - 1992/1/1
N2 - Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 sec. The currents become constant temporarily at around t = 10-11 sec, but begin to decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels in the substrate. Effects of introducing a p-buffer layer on drain-current drifts and small-signal parameters are also studied. It is concluded that the use of a low trap-density substrate combined with introducing a p-buffer layer is effective to utilize high-speed and high-frequency performances of GaAs MESFETs.
AB - Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 sec. The currents become constant temporarily at around t = 10-11 sec, but begin to decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels in the substrate. Effects of introducing a p-buffer layer on drain-current drifts and small-signal parameters are also studied. It is concluded that the use of a low trap-density substrate combined with introducing a p-buffer layer is effective to utilize high-speed and high-frequency performances of GaAs MESFETs.
UR - http://www.scopus.com/inward/record.url?scp=85067386503&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85067386503&partnerID=8YFLogxK
U2 - 10.1109/GAAS.1992.247266
DO - 10.1109/GAAS.1992.247266
M3 - Conference contribution
AN - SCOPUS:85067386503
T3 - GaAs IC Symposium Technical Digest 1992
SP - 241
EP - 244
BT - GaAs IC Symposium Technical Digest 1992
PB - Institute of Electrical and Electronics Engineers Inc.
ER -