Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs

Kazushige Horio; Yasuji Fuseya

doi:10.1109/GAAS.1992.247266

Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs

Kazushige Horio, Yasuji Fuseya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Drain-current transients of GaAs MESFETs are simulated in the range from 10^-13 to 10² sec. The currents become constant temporarily at around t = 10^-11 sec, but begin to decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels in the substrate. Effects of introducing a p-buffer layer on drain-current drifts and small-signal parameters are also studied. It is concluded that the use of a low trap-density substrate combined with introducing a p-buffer layer is effective to utilize high-speed and high-frequency performances of GaAs MESFETs.

Original language	English
Title of host publication	GaAs IC Symposium Technical Digest 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	241-244
Number of pages	4
ISBN (Electronic)	0780307739, 9780780307735
DOIs	https://doi.org/10.1109/GAAS.1992.247266
Publication status	Published - 1992 Jan 1
Event	14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992 - Miami Beach, United States Duration: 1997 Oct 4 → 1997 Oct 7

Publication series

Name	GaAs IC Symposium Technical Digest 1992

Conference

Conference	14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992
Country	United States
City	Miami Beach
Period	97/10/4 → 97/10/7

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/GAAS.1992.247266

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Cite this

Horio, K., & Fuseya, Y. (1992). Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs. In GaAs IC Symposium Technical Digest 1992 (pp. 241-244). [247266] (GaAs IC Symposium Technical Digest 1992). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GAAS.1992.247266

Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs. / Horio, Kazushige; Fuseya, Yasuji.

GaAs IC Symposium Technical Digest 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 241-244 247266 (GaAs IC Symposium Technical Digest 1992).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Horio, K & Fuseya, Y 1992, Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs. in GaAs IC Symposium Technical Digest 1992., 247266, GaAs IC Symposium Technical Digest 1992, Institute of Electrical and Electronics Engineers Inc., pp. 241-244, 14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992, Miami Beach, United States, 97/10/4. https://doi.org/10.1109/GAAS.1992.247266

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abstract = "Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 sec. The currents become constant temporarily at around t = 10-11 sec, but begin to decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels in the substrate. Effects of introducing a p-buffer layer on drain-current drifts and small-signal parameters are also studied. It is concluded that the use of a low trap-density substrate combined with introducing a p-buffer layer is effective to utilize high-speed and high-frequency performances of GaAs MESFETs.",

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AB - Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 sec. The currents become constant temporarily at around t = 10-11 sec, but begin to decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels in the substrate. Effects of introducing a p-buffer layer on drain-current drifts and small-signal parameters are also studied. It is concluded that the use of a low trap-density substrate combined with introducing a p-buffer layer is effective to utilize high-speed and high-frequency performances of GaAs MESFETs.

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