Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization

Kosuke Yokosawa, Tomoki Akimoto, Yuri Okada, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In order to form a multilayer graphene film of low resistance without transferring to the device, we have developed a simultaneous doping / etching (SDE) process to remove the Ni catalyst layer during MoCl5 intercalation doping to CVD-grown MLG on Ni catalyst. The obtained sheet resistance of the doped MLG (∼ 20 nm thick) was 40% lower than the MLG/Ni (∼ 320 nm) before the SDE process.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages47-49
Number of pages3
ISBN (Electronic)9781538665084
DOIs
Publication statusPublished - 2019 Mar 1
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 2019 Mar 122019 Mar 15

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period19/3/1219/3/15

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Keywords

  • CVD
  • doping
  • multilayer graphene
  • transfer-free

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

Cite this

Yokosawa, K., Akimoto, T., Okada, Y., & Ueno, K. (2019). Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 47-49). [8731211] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731211