Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization

Kosuke Yokosawa, Tomoki Akimoto, Yuri Okada, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In order to form a multilayer graphene film of low resistance without transferring to the device, we have developed a simultaneous doping / etching (SDE) process to remove the Ni catalyst layer during MoCl5 intercalation doping to CVD-grown MLG on Ni catalyst. The obtained sheet resistance of the doped MLG (∼ 20 nm thick) was 40% lower than the MLG/Ni (∼ 320 nm) before the SDE process.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages47-49
Number of pages3
ISBN (Electronic)9781538665084
DOIs
Publication statusPublished - 2019 Mar 1
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 2019 Mar 122019 Mar 15

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period19/3/1219/3/15

Fingerprint

Graphite
low resistance
Metallizing
Graphene
Etching
graphene
Multilayers
Doping (additives)
etching
catalysts
Catalysts
Sheet resistance
Intercalation
intercalation
Chemical vapor deposition
vapor deposition

Keywords

  • CVD
  • doping
  • multilayer graphene
  • transfer-free

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

Cite this

Yokosawa, K., Akimoto, T., Okada, Y., & Ueno, K. (2019). Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 47-49). [8731211] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731211

Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization. / Yokosawa, Kosuke; Akimoto, Tomoki; Okada, Yuri; Ueno, Kazuyoshi.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 47-49 8731211 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yokosawa, K, Akimoto, T, Okada, Y & Ueno, K 2019, Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731211, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 47-49, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 19/3/12. https://doi.org/10.1109/EDTM.2019.8731211
Yokosawa K, Akimoto T, Okada Y, Ueno K. Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 47-49. 8731211. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). https://doi.org/10.1109/EDTM.2019.8731211
Yokosawa, Kosuke ; Akimoto, Tomoki ; Okada, Yuri ; Ueno, Kazuyoshi. / Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 47-49 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).
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