Single crystalline particles formation of InSb and GaSb III-V type semiconductor by using short drop tube process

Tadaharu Kawamura, Katsuhisa Nagayama

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, we have investigated the single crystalline particle formation of InSb and GaSb 111-V type semiconductors by using the drop tube apparatus with a free fall length of 2.5 m. Microstructure and crystal orientation of the fine particle samples prepared by the drop tube process were measured by using SEM-EBSD. The samples were classified into two surface patterns: one is rough, the other is smooth. The sample with rough surface showed a polycrystalline structure, while the sample with smooth surface showed a single crystal formation.

Original languageEnglish
Pages (from-to)419-421
Number of pages3
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume79
Issue number8
DOIs
Publication statusPublished - 2015 Aug 1

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Keywords

  • Containerless process
  • Crystal orientation
  • Melt growth
  • Surface structure

ASJC Scopus subject areas

  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Condensed Matter Physics

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