Small Signal Characteristics of n+Ge Gate AlGaAs/GaAs MISFETs

Shiuichi Fujita, Makoto Hirano, Koichi Maezawa, Takashi Mizutani

    Research output: Contribution to journalArticle

    2 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)518-520
    JournalIEEE Electron Device Letters
    VolumeEDL-9
    Publication statusPublished - 1988 Apr 1

    Cite this

    Fujita, S., Hirano, M., Maezawa, K., & Mizutani, T. (1988). Small Signal Characteristics of n+Ge Gate AlGaAs/GaAs MISFETs. IEEE Electron Device Letters, EDL-9, 518-520.

    Small Signal Characteristics of n+Ge Gate AlGaAs/GaAs MISFETs. / Fujita, Shiuichi; Hirano, Makoto; Maezawa, Koichi; Mizutani, Takashi.

    In: IEEE Electron Device Letters, Vol. EDL-9, 01.04.1988, p. 518-520.

    Research output: Contribution to journalArticle

    Fujita, S, Hirano, M, Maezawa, K & Mizutani, T 1988, 'Small Signal Characteristics of n+Ge Gate AlGaAs/GaAs MISFETs', IEEE Electron Device Letters, vol. EDL-9, pp. 518-520.
    Fujita S, Hirano M, Maezawa K, Mizutani T. Small Signal Characteristics of n+Ge Gate AlGaAs/GaAs MISFETs. IEEE Electron Device Letters. 1988 Apr 1;EDL-9:518-520.
    Fujita, Shiuichi ; Hirano, Makoto ; Maezawa, Koichi ; Mizutani, Takashi. / Small Signal Characteristics of n+Ge Gate AlGaAs/GaAs MISFETs. In: IEEE Electron Device Letters. 1988 ; Vol. EDL-9. pp. 518-520.
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    AU - Mizutani, Takashi

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