Small-signal characteristics of n+-Ge gate AlGaAs/GaAs MISFET's

Shuichi Fujita, Makoto Hirano, Takashi Mizutani

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The small-signal characteristics have been clarified by S-parameter measurements and equivalent circuit modeling. A large intrinsic transconductance of 630 mS/mm and a maximum cutoff frequency fT of 70 GHz have been achieved for a MISFET with a gate length of 0.4 μm. The average electron drift velocity in the channel, evaluated from the fT, was as high as 1.7 × 107 cm/s. In obtaining an equivalent-circuit model, a gate conductance parallel to the gate-source capacitance is introduced to take into account the gate forward current of normally-off FETs. The gate conductance does not cause the fT of the MISFET to deteriorate due to a small gate forward current at a large gate bias, in contrast to GaAs MESFETs.

Original languageEnglish
Pages (from-to)518-520
Number of pages3
JournalElectron device letters
Volume9
Issue number10
Publication statusPublished - 1988 Oct
Externally publishedYes

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Equivalent circuits
Scattering parameters
Cutoff frequency
Transconductance
Field effect transistors
Capacitance
Electrons
gallium arsenide

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Fujita, S., Hirano, M., & Mizutani, T. (1988). Small-signal characteristics of n+-Ge gate AlGaAs/GaAs MISFET's. Electron device letters, 9(10), 518-520.

Small-signal characteristics of n+-Ge gate AlGaAs/GaAs MISFET's. / Fujita, Shuichi; Hirano, Makoto; Mizutani, Takashi.

In: Electron device letters, Vol. 9, No. 10, 10.1988, p. 518-520.

Research output: Contribution to journalArticle

Fujita, S, Hirano, M & Mizutani, T 1988, 'Small-signal characteristics of n+-Ge gate AlGaAs/GaAs MISFET's', Electron device letters, vol. 9, no. 10, pp. 518-520.
Fujita S, Hirano M, Mizutani T. Small-signal characteristics of n+-Ge gate AlGaAs/GaAs MISFET's. Electron device letters. 1988 Oct;9(10):518-520.
Fujita, Shuichi ; Hirano, Makoto ; Mizutani, Takashi. / Small-signal characteristics of n+-Ge gate AlGaAs/GaAs MISFET's. In: Electron device letters. 1988 ; Vol. 9, No. 10. pp. 518-520.
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