Abstract
The small-signal characteristics have been clarified by S-parameter measurements and equivalent circuit modeling. A large intrinsic transconductance of 630 mS/mm and a maximum cutoff frequency fT of 70 GHz have been achieved for a MISFET with a gate length of 0.4 μm. The average electron drift velocity in the channel, evaluated from the fT, was as high as 1.7 × 107 cm/s. In obtaining an equivalent-circuit model, a gate conductance parallel to the gate-source capacitance is introduced to take into account the gate forward current of normally-off FETs. The gate conductance does not cause the fT of the MISFET to deteriorate due to a small gate forward current at a large gate bias, in contrast to GaAs MESFETs.
| Original language | English |
|---|---|
| Pages (from-to) | 518-520 |
| Number of pages | 3 |
| Journal | Electron device letters |
| Volume | 9 |
| Issue number | 10 |
| Publication status | Published - 1988 Oct |
| Externally published | Yes |
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Cite this
Small-signal characteristics of n+-Ge gate AlGaAs/GaAs MISFET's. / Fujita, Shuichi; Hirano, Makoto; Mizutani, Takashi.
In: Electron device letters, Vol. 9, No. 10, 10.1988, p. 518-520.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Small-signal characteristics of n+-Ge gate AlGaAs/GaAs MISFET's
AU - Fujita, Shuichi
AU - Hirano, Makoto
AU - Mizutani, Takashi
PY - 1988/10
Y1 - 1988/10
N2 - The small-signal characteristics have been clarified by S-parameter measurements and equivalent circuit modeling. A large intrinsic transconductance of 630 mS/mm and a maximum cutoff frequency fT of 70 GHz have been achieved for a MISFET with a gate length of 0.4 μm. The average electron drift velocity in the channel, evaluated from the fT, was as high as 1.7 × 107 cm/s. In obtaining an equivalent-circuit model, a gate conductance parallel to the gate-source capacitance is introduced to take into account the gate forward current of normally-off FETs. The gate conductance does not cause the fT of the MISFET to deteriorate due to a small gate forward current at a large gate bias, in contrast to GaAs MESFETs.
AB - The small-signal characteristics have been clarified by S-parameter measurements and equivalent circuit modeling. A large intrinsic transconductance of 630 mS/mm and a maximum cutoff frequency fT of 70 GHz have been achieved for a MISFET with a gate length of 0.4 μm. The average electron drift velocity in the channel, evaluated from the fT, was as high as 1.7 × 107 cm/s. In obtaining an equivalent-circuit model, a gate conductance parallel to the gate-source capacitance is introduced to take into account the gate forward current of normally-off FETs. The gate conductance does not cause the fT of the MISFET to deteriorate due to a small gate forward current at a large gate bias, in contrast to GaAs MESFETs.
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M3 - Article
AN - SCOPUS:0024088467
VL - 9
SP - 518
EP - 520
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 10
ER -