Source of surface morphological defects formed on 4H-SiC homoepitaxial films

Tatsuya Okada, Kengo Ochi, Hiroyuki Kawahara, Takuro Tomita, Shigeki Matsuo, Makoto Yamaguchi, Kouichi Higashimine, Tsunenobu Kimoto

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H-SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO2- From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12)(4403) type.

Original languageEnglish
Pages (from-to)7625-7631
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number10 A
DOIs
Publication statusPublished - 2006 Oct 15

Keywords

  • Homoepitaxial film
  • Sheared frank dislocation
  • Silicon carbide (SiC)
  • Surface morphological defect
  • Transmission electron microscopy (TEM)
  • Zirconia (ZrO) inclusion
  • micro-Raman spectroscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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