Source of surface morphological defects formed on 4H-SiC homoepitaxial films

Tatsuya Okada, Kengo Ochi, Hiroyuki Kawahara, Takuro Tomita, Shigeki Matsuo, Makoto Yamaguchi, Kouichi Higashimine, Tsunenobu Kimoto

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H-SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO2- From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12)(4403) type.

Original languageEnglish
Pages (from-to)7625-7631
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number10 A
DOIs
Publication statusPublished - 2006 Oct 15
Externally publishedYes

Fingerprint

Surface defects
Dislocations (crystals)
Transmission electron microscopy
Burgers vector
defects
inclusions
Diffraction patterns
Raman spectroscopy
transmission electron microscopy
Defects
emerging
chemical composition
Substrates
diffraction patterns
Chemical analysis
spectroscopy
x rays
energy
X-Ray Emission Spectrometry

Keywords

  • Homoepitaxial film
  • micro-Raman spectroscopy
  • Sheared frank dislocation
  • Silicon carbide (SiC)
  • Surface morphological defect
  • Transmission electron microscopy (TEM)
  • Zirconia (ZrO) inclusion

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Source of surface morphological defects formed on 4H-SiC homoepitaxial films. / Okada, Tatsuya; Ochi, Kengo; Kawahara, Hiroyuki; Tomita, Takuro; Matsuo, Shigeki; Yamaguchi, Makoto; Higashimine, Kouichi; Kimoto, Tsunenobu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 10 A, 15.10.2006, p. 7625-7631.

Research output: Contribution to journalArticle

Okada, Tatsuya ; Ochi, Kengo ; Kawahara, Hiroyuki ; Tomita, Takuro ; Matsuo, Shigeki ; Yamaguchi, Makoto ; Higashimine, Kouichi ; Kimoto, Tsunenobu. / Source of surface morphological defects formed on 4H-SiC homoepitaxial films. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 10 A. pp. 7625-7631.
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