Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

M. Sugiho, T. Kamae, K. Makishima, T. Takahashi, T. Murakami, M. Tashiro, Y. Fukazawa, N. Iyomoto, H. Ozawa, A. Kubota, K. Nakazawa, K. Yamaoka, M. Kokubun, N. Ota, C. Tanihata, N. Isobe, Y. Terada, Y. Matsumoto, Y. Uchiyama, D. YonetokuI. Takahashi, J. Kotoku, S. Watanabe, Y. Ezoe

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Abstract

The ASTRO-E hard X-ray detector utilizes GSO(Gd2SiO5:Ce 0.5% mol)-BGO(Bi4Ge3O12) well-type phoswich counters [1] in compound-eye configuration to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm2 in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.

Original languageEnglish
Pages (from-to)426-429
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume48
Issue number3 I
DOIs
Publication statusPublished - 2001 Jun
Externally publishedYes

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Keywords

  • ASTRO-E
  • Hard X-ray detector
  • P-i-n silicon diode
  • Spectral response

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Sugiho, M., Kamae, T., Makishima, K., Takahashi, T., Murakami, T., Tashiro, M., ... Ezoe, Y. (2001). Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector. IEEE Transactions on Nuclear Science, 48(3 I), 426-429. https://doi.org/10.1109/23.940093